Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI:10.1109/HITEN.1999.827468

T. Rudenko, V. Lysenko, V. Kilchytska, A. Rudenko, J. Colinge

引用次数: 5

Abstract

In this paper, off-state leakage currents in long-channel SOI MOSFETs are investigated by simulation and measurements in the range 50-320/spl deg/C. The general trends of high-temperature off-state currents are interpreted in terms of the diffusion mechanism. The back-gate biasing and silicon film thinning effects are considered. Both single- and double-gate operation cases are analyzed.

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基于扩散机制的SOI mosfet高温失态电流特性研究

本文通过模拟和测量，研究了长通道SOI mosfet在50-320/spl度/C范围内的失态泄漏电流。从扩散机理的角度解释了高温断态电流的一般趋势。考虑了后门偏置效应和硅膜变薄效应。分析了单闸和双闸的运行情况。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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