72nd Device Research Conference最新文献_第7页

Experimental demonstration of strain-clocked Boolean nanomagnetic logic and information propagation 应变时钟布尔纳米磁逻辑和信息传播的实验演示

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872355

N. D’Souza, M. Salehi-Fashami, Supriyo Bandyopadhyay, J. Atulasimha

{"title":"Experimental demonstration of strain-clocked Boolean nanomagnetic logic and information propagation","authors":"N. D’Souza, M. Salehi-Fashami, Supriyo Bandyopadhyay, J. Atulasimha","doi":"10.1109/DRC.2014.6872355","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872355","url":null,"abstract":"Nanomagnetic logic has emerged as a promising alternative to transistor based logic because it offers both non-volatility and energy-efficiency. Recent experiments by Bhowmik et al. [1] demonstrate energy-efficient magnetization switching in nanomagnets using the Spin Hall effect. Another switching paradigm claiming unprecedented energy-efficiency involves magnetization switching of the nanomagnets via “straintronics” [2], whereby the magnetization of a multiferroic magnet is switched with a tiny voltage generating strain in a magnetostrictive-piezoelectric composite (Fig. 1a). This scheme, proposed by our group, was previously shown to reduce the energy dissipated per bit flip to a few hundred kT at room temperature [2-4]. In this work, we show for the first time experimental results implementing some of these schemes, using elliptical magnetostrictive nanomagnets of nominal lateral dimensions ~200 nm and thickness ~12 nm that possess shape anisotropy and are grown on a (001) PMN-PT substrate (Fig. 1b). A voltage is applied along the length of the PMN-PT substrate to generate mechanical strain, via d33 coupling, along the nanomagnet's easy axis of magnetization. The resulting strain-induced magnetization switching is investigated for single-domain nanomagnets and for clocking of dipole-coupled magnet arrays to implement Boolean logic using the schemes illustrated in Fig. 2. The strain clocking schemes used in our experiments are studied with Magnetic Force Microscopy (MFM) that is used to image the single domain magnetization switching and demonstrate strain clocked nanomagnetic logic for the first time [5]. These experimental results will be highlighted in this talk. Preliminary results are included here that show ferromagnetic (Fig. 3b) and anti-ferromagnetic ordering (Fig. 3c) in such nanomagnets.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117055014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Two-terminal proton conducting devices with synaptic behavior and memory 具有突触行为和记忆的双端质子传导装置

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872389

M. Rolandi, Erik E. Josberger, Yingxin Deng, Wei Sun, Rylan Kautz

引用次数: 1

Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography 利用纳米球光刻技术制备一二极管一电阻纳米柱结构的SiOX阻性开关

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872388

L. Ji, Yao‐Feng Chang, B. Fowler, Ying‐Chen Chen, T. Tsai, Kuan‐Chang Chang, Min-Chen Chen, T. Chang, S. Sze, E. Yu, Jack C. Lee

引用次数: 1

Enhancing the deep ultraviolet response of 4H-silicon carbide-based photodiodes between 210 nm and 255 nm 提高4h -碳化硅基光电二极管在210 ~ 255 nm范围内的深紫外响应

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872314

L. E. Rodak, A. Sampath, Y. Chen, Q. Zhou, J. Campbell, H. Shen, M. Wraback

引用次数: 0

Investigation of electrostatic body control in accumulated body MOSFETs 积体mosfet静电体控制的研究

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872385

M. Akbulut, F. Dirisaglik, A. Cywar, A. Faraclas, D. Pence, J. Patel, S. Steen, R. Nunes, H. Silva, A. Gokirmak

引用次数: 0

Charge-carrier injection, extraction and trapping dynamics in organic thin-film transistors based on different organic semiconductors evaluated by displacement current measurements 基于位移电流测量的不同有机半导体有机薄膜晶体管中载流子注入、提取和俘获动力学研究

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872303

Sibani Bisoyi, R. Rodel, U. Zschieschang, K. Takimiya, H. Klauk, S. P. Tiwari

{"title":"Charge-carrier injection, extraction and trapping dynamics in organic thin-film transistors based on different organic semiconductors evaluated by displacement current measurements","authors":"Sibani Bisoyi, R. Rodel, U. Zschieschang, K. Takimiya, H. Klauk, S. P. Tiwari","doi":"10.1109/DRC.2014.6872303","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872303","url":null,"abstract":"Organic thin-film transistors (TFTs) have potential as pixel drivers in flexible active-matrix organic light-emitting diode displays [1]. Hence it is essential to analyze the charge-carrier injection and extraction dynamics of organic TFTs to gain a better understanding of the trapping and detrapping at the TFT interfaces. From the current-voltage characteristics of the TFTs, many important parameters can be extracted, such as carrier mobility, threshold voltage, on/off ratio, subthreshold slope and transconductance. But to quantitatively evaluate the trapping and detrapping dynamics, displacement current measurements on two-terminal long-channel capacitors (LCCs) are far more useful [2, 3]. The cross-section and the layout of an LCC are schematically shown in Fig. 1. Unlike a TFT, an LCC has only one contact, so that carriers are injected into and extracted from the semiconductor through the same contact. To increase the signal-to-noise ratio, a very large channel length (up to 6 cm) is employed. While Liang et al. have performed displacement current measurements on pentacene-based LCCs [2,3], we report here on displacement current measurements on LCCs based on four different organic semiconductors: pentacene, dinaptho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), 2,9-didecyl-DNTT (C10-DNTT) and diphenyl-DNTT (DPh-DNTT). In TFTs, these semiconductors show hole mobilities ranging from 1 to 7 cm2/Vs. The goal of the displacement current measurements reported here is to study how the choice of the semiconductor affects the trapping and detrapping dynamics in organic TFTs.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130654776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Calculation of electron impact ionization co-efficient in β-Ga2O3 β-Ga2O3中电子冲击电离系数的计算

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872302

Krishnendu Ghosh, U. Singisetti

引用次数: 13

The piezoelectric transformer field effect transistor 压电变压器场效应晶体管

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872282

S. Agarwal, E. Yablonovitch

引用次数: 1

Multi-valley high-field transport in 2-dimensional MoS2 transistors 二维MoS2晶体管的多谷高场输运

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872358

A. Serov, V. Dorgan, C. English, E. Pop

引用次数: 4

SPICE models for metallic all-spin-logic devices and interconnects 用于金属全自旋逻辑器件和互连的SPICE模型

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872409

A. Naeemi

{"title":"SPICE models for metallic all-spin-logic devices and interconnects","authors":"A. Naeemi","doi":"10.1109/DRC.2014.6872409","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872409","url":null,"abstract":"As Si CMOS technology approaches its scaling limits, there is a global search for novel devices based on state variables other than electronic charge. Among the potential alternative state variables, electron spin has received special attention thanks to its advantages in terms of robustness, non-volatility, and enhanced functionality. Recently, Purdue researchers proposed an all-spin logic (ASL) device that is a derivative of the nonlocal spin-valve structure and accomplishes the five essential characteristics for logic devices: concatenability, nonlinearity, feedback elimination, gain, and a complete set of Boolean operations [1], [2]. Various materials such as metals (copper and aluminum), semiconductors (silicon and gallium arsenide), and even novel carbon-based material such as graphene may be used to implement the channel in an ASL device. Metals are particularly attractive because of their high conductivity, which helps to reduce the “conductivity mismatch” problem [3] prevalent in spin devices with both semiconducting and graphene channels. In this talk, compact models are presented for the spin transport parameters in Cu and Al wires that capture the impact of size effects including surface scattering and grain boundary scattering at nanoscale dimensions [4]. The proposed models have been calibrated with experimental data from mesoscopic lateral spin valves. To model an ASL interconnect, one needs to account for the magnet dynamic, electronic and spintronic transport through magnet to non-magnet interfaces, electric currents, and spin diffusion. A comprehensive set of SPICE models that captures all these effects are described [5]. Finally, the models are used to predict the delay and energy dissipation of ASL devices and interconnects as functions of channel length and cross-sectional dimensions","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133416602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0