72nd Device Research Conference最新文献_第6页

Plasmonic and metallic cavity nanolasers: A new paradigm for semiconductor lasers? 等离子体和金属腔纳米激光器:半导体激光器的新范式?

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872286

C. Ning, K. Ding

引用次数: 0

Experimental demonstration of inverter and NAND operation in p-TFET logic at ultra-low supply voltages down to VDD = 0.15 V 超低电源电压VDD = 0.15 V下p-TFET逻辑下逆变器和NAND工作的实验演示

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872281

S. Richter, C. Schulte-Braucks, L. Knoll, G. V. Luong, A. Schafer, S. Trellenkamp, Qing-Tai Zhao, S. Mantl

引用次数: 5

Modulation of over 1014 cm−2 electrons at the SrTiO3/GdTiO3 heterojunction SrTiO3/GdTiO3异质结中超过1014 cm−2电子的调制

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872276

O. Shoron, M. Boucherit, C. Jackson, T. Cain, M. Buffon, C. Polchinski, S. Stemmer, S. Rajan

引用次数: 2

Surface transport and DC current gain in InGaAs/InP DHBTs for THz applications 太赫兹应用中InGaAs/InP dhbt的表面输运和直流电流增益

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872345

H. Chiang, J. Rode, P. Choudhary, M. Rodwell

{"title":"Surface transport and DC current gain in InGaAs/InP DHBTs for THz applications","authors":"H. Chiang, J. Rode, P. Choudhary, M. Rodwell","doi":"10.1109/DRC.2014.6872345","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872345","url":null,"abstract":"InGaAs/InP double heterojunction bipolar transistors (DHBTs) are highly suitable for applications in GHz mixed-signal ICs, >100 GHz digital logic, and millimeter-wave communications and imaging because of their high breakdown voltage and high cutoff frequencies (fτ/fmax~0.5/1.0 THz)[1,2]. To extend HBT bandwidth, device dimensions must be reduced and the doping concentration in the InGaAs base must be increased. As a result, surface recombination increases, as does lateral electron transport from the emitter to the base contact, both on the exposed base surface and within the bulk base semiconductor. The DC current gain (β) thus decreases. Experimentally measured β are ~10-25 in THz DHBTs [2]. Because it limits the useful range of circuit applications, it is important to understand the mechanisms causing decreased β in scaled DHBTs. Using TCAD simulation, we had earlier found that lateral carrier diffusion within the bulk of the base contributes significantly to the observed high base currents in THz HBTs [3]. Here we model the surface conduction between the emitter and base contacts resulting from Fermi level pinning at the exposed base semiconductor surface, comparing simulations with experimental data. At bias conditions corresponding to peak fτ/fmax, we find that ~50% of the total base current arises from surface conduction. This finding suggests the need for improved base surface passivation in THz HBTs.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127547559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Performance analysis of different SRAM cell topologies employing tunnel-FETs 采用隧道场效应管的不同SRAM单元拓扑的性能分析

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872338

S. Strangio, P. Palestri, D. Esseni, L. Selmi, F. Crupi

引用次数: 5

Monolithically patterned high mobility solution-processed metal-oxide TFTs with metallic capping layers 具有金属盖层的单片高迁移率溶液加工金属氧化物tft

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872335

Kyung‐Tae Kim, Jae Hyun Kim, I. Jang, Chanho Jo, Jaekyun Kim, Yong‐Hoon Kim, S. Park

引用次数: 0

Observation of impact ionization at sub-0.5V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications RRAM用Si外延对I-NPN选择器中低于0.5 v冲击电离的观察及其理想性的改善

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872336

B. Das, R. Meshram, V. Ostwal, J. Schulze, U. Ganguly

引用次数: 7

Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming 基于仿生编程的Pr0.7Ca0.3MnO3 RRAM记忆突触可塑性研究

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872334

N. Panwar, D. Kumar, N. Upadhyay, P. Arya, U. Ganguly, B. Rajendran

引用次数: 21

Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs Ge p沟道(Fin) fet源极/漏极低温注入

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872384

P. Bhatt, P. Swarnkar, S. Mittal, F. Basheer, C. Thomidis, C. Hatem, B. Colombeau, N. Variam, A. Nainani, S. Lodha

引用次数: 0

Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr+ Ion implantation 重Kr+离子注入提高硅基上AlGaN/GaN hemt的器件隔离

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872324

S. Arulkumaran, G. Ng, K. Ranjan, G. Z. Saw, P. Murmu, J. Kennedy

{"title":"Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr+ Ion implantation","authors":"S. Arulkumaran, G. Ng, K. Ranjan, G. Z. Saw, P. Murmu, J. Kennedy","doi":"10.1109/DRC.2014.6872324","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872324","url":null,"abstract":"GaN high-electron-mobility transistor (HEMT) based technology demonstrated excellent high-frequency, high microwave power and power switching device applications that exceeded the existing Si technology limits. Inter device isolation of GaN-based HEMTs are typically achieved with either plasma mesa etching or ion implantation. The advantage for the ion implantation-based isolation approach is that it can offer device planarity and thus improve the fabrication yield. In addition, the planarity will avoid the gate from touching the 2DEG channel at the mesa-sidewall thus reduces the gate leakage current. For device isolation, different ion species (N+, O+, Ar+, Fe+ and Zn+) have been utilized for AlGaN/GaN HEMTs [1-5]. Except Fe+, no ion species have been proven to maintain the high resistivity of the the GaN buffer layer after high-temperature annealing. Recently, Umeda et al. reported thermally stable device isolation by Fe+ implantation [5]. However, Fe+-ions may create deep levels. In this work, we have selected inert Kr+-ions which can provide heavy damage to the crystal lattice. As Kr+ has ~2×, ~1.5× and 1.2× heavier atomic mass than Ar+, Fe+, and Zn+ ions, respectively. it is expected that the heavy Kr+-ion induced lattice damages/disorders will be hard to recover completely by high-temperature thermal annealing. To investigate the thermal stability of Kr+ implant-isolation, we have investigated thermal stability of implant-isolated samples by isochronal annealing process. To-date, there are also very few reports on the effect of the blocking voltage of implant-isolated AlGaN/GaN HEMT structures with SiN passivation [2], which has significant impact on their high breakdown voltage characteristics. Hence, in this work, we have also investigated the influence of SiN passivation in the device isolation current (i.e. buffer leakage current, Ibuff) on implant-isolated and mesa-isolated devices.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116982085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8