重Kr+离子注入提高硅基上AlGaN/GaN hemt的器件隔离

S. Arulkumaran, G. Ng, K. Ranjan, G. Z. Saw, P. Murmu, J. Kennedy
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引用次数: 8

摘要

基于GaN高电子迁移率晶体管(HEMT)的技术展示了卓越的高频、高微波功率和功率开关器件应用,超越了现有Si技术的限制。氮化镓基hemt的器件间隔离通常通过等离子体台面蚀刻或离子注入来实现。基于离子注入的隔离方法的优点是它可以提供器件的平面性,从而提高制造成品率。此外,平面性将避免栅极接触到台面侧壁上的2DEG通道,从而减少栅极泄漏电流。为了进行器件隔离,AlGaN/GaN HEMTs采用了不同的离子种类(N+、O+、Ar+、Fe+和Zn+)[1-5]。除Fe+外,没有任何一种离子能在高温退火后保持GaN缓冲层的高电阻率。最近,Umeda等人报道了通过Fe+植入分离热稳定器件[5]。然而,铁离子可能产生较深的水平。在这项工作中,我们选择了惰性的Kr+离子,它可以对晶格造成严重的破坏。因为Kr+的原子质量分别比Ar+、Fe+和Zn+重~ 2x、~1.5 x和1.2 x。预计重Kr+离子引起的晶格损伤/紊乱很难通过高温退火完全恢复。为了研究Kr+植入体隔离的热稳定性,我们采用等时退火工艺研究了植入体隔离样品的热稳定性。迄今为止,关于氮化辛钝化的植入隔离AlGaN/GaN HEMT结构的阻滞电压影响的报道也很少[2],阻滞电压对其高击穿电压特性有重要影响。因此,在这项工作中,我们还研究了器件隔离电流(即缓冲泄漏电流,Ibuff)中的SiN钝化对植入隔离和台面隔离器件的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr+ Ion implantation
GaN high-electron-mobility transistor (HEMT) based technology demonstrated excellent high-frequency, high microwave power and power switching device applications that exceeded the existing Si technology limits. Inter device isolation of GaN-based HEMTs are typically achieved with either plasma mesa etching or ion implantation. The advantage for the ion implantation-based isolation approach is that it can offer device planarity and thus improve the fabrication yield. In addition, the planarity will avoid the gate from touching the 2DEG channel at the mesa-sidewall thus reduces the gate leakage current. For device isolation, different ion species (N+, O+, Ar+, Fe+ and Zn+) have been utilized for AlGaN/GaN HEMTs [1-5]. Except Fe+, no ion species have been proven to maintain the high resistivity of the the GaN buffer layer after high-temperature annealing. Recently, Umeda et al. reported thermally stable device isolation by Fe+ implantation [5]. However, Fe+-ions may create deep levels. In this work, we have selected inert Kr+-ions which can provide heavy damage to the crystal lattice. As Kr+ has ~2×, ~1.5× and 1.2× heavier atomic mass than Ar+, Fe+, and Zn+ ions, respectively. it is expected that the heavy Kr+-ion induced lattice damages/disorders will be hard to recover completely by high-temperature thermal annealing. To investigate the thermal stability of Kr+ implant-isolation, we have investigated thermal stability of implant-isolated samples by isochronal annealing process. To-date, there are also very few reports on the effect of the blocking voltage of implant-isolated AlGaN/GaN HEMT structures with SiN passivation [2], which has significant impact on their high breakdown voltage characteristics. Hence, in this work, we have also investigated the influence of SiN passivation in the device isolation current (i.e. buffer leakage current, Ibuff) on implant-isolated and mesa-isolated devices.
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