Ge p沟道(Fin) fet源极/漏极低温注入

72nd Device Research Conference Pub Date : 2014-06-22 DOI:10.1109/DRC.2014.6872384

P. Bhatt, P. Swarnkar, S. Mittal, F. Basheer, C. Thomidis, C. Hatem, B. Colombeau, N. Variam, A. Nainani, S. Lodha

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引用次数: 0

摘要

在低温下，通过低温(400℃)活化退火的单步硼注入工艺，我们证明了p+-Ge上创纪录的硼活化>4×1020cm-3和接触电阻率1.7×10-8Ω-cm2。与低温注入和热注入(400oC)不同，低温注入还具有更浅的结(保持较低的Rsh)和更高的离子/IOFF比。低温低能量BF2外延Ge鳍植入的透射电镜和电学数据以及器件模拟表明，与室温植入相比，掺杂剂激活有显著的可扩展改善，证明了低温植入用于未来3D Ge沟道p- finfet源极/漏极扩展的可行性。

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Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs

We demonstrate record boron activation >4×10²⁰cm^-3 and contact resistivity of 1.7×10^-8Ω-cm² on p⁺-Ge using a single boron implantation process step at cryogenic temperature followed by a low temperature (400^oC) activation anneal. Unlike RT and hot (400^oC) implantation, cryogenic implantation also gives shallower junctions (maintaining lower R_sh) and higher I_ON/I_OFF ratio. Fin TEM and electrical data as well as device simulations for cryogenic, low energy BF₂ implanted epitaxial Ge fins indicate significant and scalable improvement in dopant activation vs room temperature implantation demonstrating feasibility of cryogenic implants for source/drain extensions of future 3D Ge channel p-FinFETs.

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72nd Device Research Conference

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