基于仿生编程的Pr0.7Ca0.3MnO3 RRAM记忆突触可塑性研究

N. Panwar, D. Kumar, N. Upadhyay, P. Arya, U. Ganguly, B. Rajendran
{"title":"基于仿生编程的Pr0.7Ca0.3MnO3 RRAM记忆突触可塑性研究","authors":"N. Panwar, D. Kumar, N. Upadhyay, P. Arya, U. Ganguly, B. Rajendran","doi":"10.1109/DRC.2014.6872334","DOIUrl":null,"url":null,"abstract":"In this paper, the authors have demonstrated various forms of timing dependent plasticity in PCMO based RRAM devices using very simple programming pulses leveraging its memristive characteristics. Thanks to the intrinsic rectifying nature of their devices in the ON state, they have also shown that our synapse circuit does not require a current-limiting bipolar diode to prevent parasitic programming. These devices thus can be integrated in cross-bar arrays to build neuromorphic systems capable of performing a wide variety of supervised and unsupervised learning tasks.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"232 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming\",\"authors\":\"N. Panwar, D. Kumar, N. Upadhyay, P. Arya, U. Ganguly, B. Rajendran\",\"doi\":\"10.1109/DRC.2014.6872334\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the authors have demonstrated various forms of timing dependent plasticity in PCMO based RRAM devices using very simple programming pulses leveraging its memristive characteristics. Thanks to the intrinsic rectifying nature of their devices in the ON state, they have also shown that our synapse circuit does not require a current-limiting bipolar diode to prevent parasitic programming. These devices thus can be integrated in cross-bar arrays to build neuromorphic systems capable of performing a wide variety of supervised and unsupervised learning tasks.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"232 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872334\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21

摘要

在本文中,作者利用非常简单的编程脉冲利用其记忆特性,展示了基于PCMO的RRAM器件中各种形式的时序相关可塑性。由于他们的器件在ON状态下具有固有的整流特性,他们还表明,我们的突触电路不需要限流双极二极管来防止寄生编程。因此,这些设备可以集成在交叉条阵列中,以构建能够执行各种监督和无监督学习任务的神经形态系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming
In this paper, the authors have demonstrated various forms of timing dependent plasticity in PCMO based RRAM devices using very simple programming pulses leveraging its memristive characteristics. Thanks to the intrinsic rectifying nature of their devices in the ON state, they have also shown that our synapse circuit does not require a current-limiting bipolar diode to prevent parasitic programming. These devices thus can be integrated in cross-bar arrays to build neuromorphic systems capable of performing a wide variety of supervised and unsupervised learning tasks.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信