压电变压器场效应晶体管

S. Agarwal, E. Yablonovitch
{"title":"压电变压器场效应晶体管","authors":"S. Agarwal, E. Yablonovitch","doi":"10.1109/DRC.2014.6872282","DOIUrl":null,"url":null,"abstract":"In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Unfortunately, conventional transistors fundamentally require around half a volt to switch. On the other hand, electrical wires only need millivolts to overcome noise and communicate information. This voltage mismatch results in a significant amount of power being wasted by charging the wires to a high voltage. To overcome this mismatch, either a new low voltage switch[1-5] or a voltage transformer is needed. In this paper we propose a new CMOS compatible piezoelectric voltage transformer that can be placed on the gate of each transistor to reduce the voltage needed for switching. This allows for a low voltage to be used to charge the wires while increasing the voltage at the transistor where it's needed. This results in the Piezoelectric Transformer Field Effect Transistor, or PT-FET.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The piezoelectric transformer field effect transistor\",\"authors\":\"S. Agarwal, E. Yablonovitch\",\"doi\":\"10.1109/DRC.2014.6872282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Unfortunately, conventional transistors fundamentally require around half a volt to switch. On the other hand, electrical wires only need millivolts to overcome noise and communicate information. This voltage mismatch results in a significant amount of power being wasted by charging the wires to a high voltage. To overcome this mismatch, either a new low voltage switch[1-5] or a voltage transformer is needed. In this paper we propose a new CMOS compatible piezoelectric voltage transformer that can be placed on the gate of each transistor to reduce the voltage needed for switching. This allows for a low voltage to be used to charge the wires while increasing the voltage at the transistor where it's needed. This results in the Piezoelectric Transformer Field Effect Transistor, or PT-FET.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

为了降低现代电子产品的功耗,需要显著降低工作电压。不幸的是,传统的晶体管基本上需要大约半伏特的电压才能切换。另一方面,电线只需要毫伏电压就能克服噪音和传递信息。这种电压不匹配导致大量的电力被浪费在电线充电到高电压。为了克服这种不匹配,需要一个新的低压开关[1-5]或电压互感器。在本文中,我们提出了一种新的CMOS兼容压电电压互感器,可以放置在每个晶体管的栅极上,以降低开关所需的电压。这允许使用低电压给电线充电,同时在晶体管需要的地方增加电压。这就产生了压电变压器场效应晶体管(PT-FET)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The piezoelectric transformer field effect transistor
In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Unfortunately, conventional transistors fundamentally require around half a volt to switch. On the other hand, electrical wires only need millivolts to overcome noise and communicate information. This voltage mismatch results in a significant amount of power being wasted by charging the wires to a high voltage. To overcome this mismatch, either a new low voltage switch[1-5] or a voltage transformer is needed. In this paper we propose a new CMOS compatible piezoelectric voltage transformer that can be placed on the gate of each transistor to reduce the voltage needed for switching. This allows for a low voltage to be used to charge the wires while increasing the voltage at the transistor where it's needed. This results in the Piezoelectric Transformer Field Effect Transistor, or PT-FET.
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