L. Ji, Yao‐Feng Chang, B. Fowler, Ying‐Chen Chen, T. Tsai, Kuan‐Chang Chang, Min-Chen Chen, T. Chang, S. Sze, E. Yu, Jack C. Lee
{"title":"利用纳米球光刻技术制备一二极管一电阻纳米柱结构的SiOX阻性开关","authors":"L. Ji, Yao‐Feng Chang, B. Fowler, Ying‐Chen Chen, T. Tsai, Kuan‐Chang Chang, Min-Chen Chen, T. Chang, S. Sze, E. Yu, Jack C. Lee","doi":"10.1109/DRC.2014.6872388","DOIUrl":null,"url":null,"abstract":"Resistive random access memories (ReRAM) has attracted tremendous attention as a promising candidate for non-volatile memory. ReRAM can be classified into two categories: unipolar and bipolar memory. The advantage of unipolar memory is that it can be integrated into simple 1D-1R architecture with low static power consumption and constrained sneak-path issue. This is because unipolar memory does not require opposite voltage polarities for on/off switching [1]. SiOx has long been used as gate dielectrics for MOSFET and recently proved to be an active unipolar ReRAM material [2, 3]. Here we report SiOx-based 1D-1R high density nanopillar ReRAM via nanosphere lithography.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography\",\"authors\":\"L. Ji, Yao‐Feng Chang, B. Fowler, Ying‐Chen Chen, T. Tsai, Kuan‐Chang Chang, Min-Chen Chen, T. Chang, S. Sze, E. Yu, Jack C. Lee\",\"doi\":\"10.1109/DRC.2014.6872388\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive random access memories (ReRAM) has attracted tremendous attention as a promising candidate for non-volatile memory. ReRAM can be classified into two categories: unipolar and bipolar memory. The advantage of unipolar memory is that it can be integrated into simple 1D-1R architecture with low static power consumption and constrained sneak-path issue. This is because unipolar memory does not require opposite voltage polarities for on/off switching [1]. SiOx has long been used as gate dielectrics for MOSFET and recently proved to be an active unipolar ReRAM material [2, 3]. Here we report SiOx-based 1D-1R high density nanopillar ReRAM via nanosphere lithography.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872388\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography
Resistive random access memories (ReRAM) has attracted tremendous attention as a promising candidate for non-volatile memory. ReRAM can be classified into two categories: unipolar and bipolar memory. The advantage of unipolar memory is that it can be integrated into simple 1D-1R architecture with low static power consumption and constrained sneak-path issue. This is because unipolar memory does not require opposite voltage polarities for on/off switching [1]. SiOx has long been used as gate dielectrics for MOSFET and recently proved to be an active unipolar ReRAM material [2, 3]. Here we report SiOx-based 1D-1R high density nanopillar ReRAM via nanosphere lithography.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
