72nd Device Research Conference最新文献

{"title":"Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model","authors":"Jongyeon Kim, H Zhao, Yanfeng Jiang, A. Klemm, Jianping Wang, C. Kim","doi":"10.1109/DRC.2014.6872344","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872344","url":null,"abstract":"This paper presents a comprehensive study on the scalability of STT-MRAM based on various MTJ technologies: namely, in-plane MTJ (IMTJ), crystal perpendicular MTJ (c-PMTJ), and interface perpendicular MTJ (i-PMTJ). For a practical analysis, our simulation model captures key physics of STT switching in various MTJs by incorporating dimension-dependent effective anisotropy field (HKeff) into the Landau-Lifshitz-Gilbert (LLG) equation and considering realistic material parameters.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132441184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond","authors":"Kain Lu Low, Y. Yeo, G. Liang","doi":"10.1109/DRC.2014.6872368","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872368","url":null,"abstract":"The voltage scaling capabilities of group IV, III-V and 2D-material DG-UTB FETs along the optimum transport direction and surface orientation were benchmarked with ITRS metrics from year 2018 and beyond. Our study shows that GaSb and Ge have the best voltage scalability for both n and pFET used in HP logic transistors. It was also found that InAs and In0.3Ga0.7Sb nFETs fail to meet the HP ON-current (ION) requirement due to smaller density of states (DOS). For LOP technology, Si and all 2D materials apart from MoS2 pFETs, meet the VDD requirements with Si and silicane offering better VDD scalability.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121400478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Air-stable, low-voltage organic transistors: High-mobility thienoacene derivatives for unipolar and complementary ring oscillators on flexible substrates","authors":"U. Kraft, M. Sejfie, T. Zaki, F. Letzkus, J. Burghartz, K. Takimiya, E. Weber, H. Klauk","doi":"10.1109/DRC.2014.6872407","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872407","url":null,"abstract":"The organic semiconductor DNTT (dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene) and its didecyl- and diphenyl derivatives C10-DNTT and DPh-DNTT [1-3] have recently shown exceptionally large field-effect mobilities together with excellent air stability [4]. Here we present a detailed analysis of the mobility, contact resistance, air stability and signal delay (measured in unipolar as well as complementary ring oscillators) of low-voltage (~3 V) thin-film transistors (TFTs) based on these semiconductors with channel lengths down to 0.5 μm on flexible plastic substrates. The TFTs were fabricated with an inverted staggered device structure and with Al gate electrodes, a gate dielectric composed of a plasma-grown AlOx layer (3.6 nm thick) and a tetradecylphosphonic acid self-assembled monolayer (SAM), a vacuum-deposited organic semiconductor layer (25 nm), and Au source and drain contacts [4]. The fabrication of organic TFTs with channel lengths as short as 0.5 μm was accomplished using high-resolution silicon stencil masks [6,7]. All measurements were performed in ambient air.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116542431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Operating principle verification and scaling benefits of SGLC eNVM","authors":"Sung-Kun Park, Nam-Yoon Kim, Eun-Mee Kown, Sangyong Kim, I. Cho, K. Yoo","doi":"10.1109/DRC.2014.6872337","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872337","url":null,"abstract":"The authors demonstrated and verified the operation of a SGLC eNVM cell using 3D and 2D TCAD simulations. In addition, we have explained the benefits of the SGLC NVM cell as CMOS process design rules shrink. The novel SGLC cell shows a smaller size than 6T SRAM for beyond the 65 nm technology node. The SGLC cell shows ideal characteristics for eNVM, such as a fast program speed, multi-time programmable support, over-erase free features as well as an SRAM comparable cell size without any additional process steps.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122930368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Terahertz emission and detection in double-graphene-layer structures","authors":"T. Otsuji, V. Aleshkin, A. Dubinov, M. Ryzhii, V. Mitin, M. Shur, V. Ryzhii","doi":"10.1109/DRC.2014.6872346","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872346","url":null,"abstract":"The authors discuss the photon-assisted resonant radiative intergraphene layer transitions for applications of double-graphene-layer (D-GL) heterostructures for THz/IR lasers and photodetectors (PDs). The main element of both lasers and PDs under consideration is a D-GL core-shell heterostructure with the independently contacted GLs separated by the thin transparent tunnel-barrier layer. The bias voltage applied between the GL's contacts induces the electron and hole gases in the opposing GLs. The electron and hole densities in GLs are controlled by the gate voltage.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125121225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A monolithic InGaN/GaN disk-in-nanowire electrically pumped edge-emitting green (λ=533 nm) laser on (001) silicon","authors":"S. Jahangir, T. Frost, E. Stark, S. Deshpande, P. Bhattacharya","doi":"10.1109/DRC.2014.6872287","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872287","url":null,"abstract":"Silicon photonics has assumed an increasing degree of importance due to the necessity of realizing photonic components, and ultimately optical communication systems, on silicon CMOS chips. While silicon based detectors, waveguides, and modulators have emerged with superior levels of performance, the demonstration of a suitable electrically pumped monolithic laser on (001) Si substrate has remained elusive. GaAs-based quantum well and quantum dot lasers, emitting in the wavelength range of 1.0-1.3 μm have been reported by us and others, but these devices have to be grown on misoriented substrates [(001)→4° towards (111)] to prevent antiphase domains. The large lattice mismatch induced dislocation density makes the long term reliability questionable. III-V based lasers bonded on silicon substrates is another technology that has been pursued with some degree of success. Growth on miscut substrates and with novel buffer layers have been investigated. Ga(In)N nanowires and InGaN/GaN disk-in-nanowire heterostractures can be grown relatively free of extended defects on (001) Si. The nanowires grow in the wurtzite crystalline form along the c-axis. Due to the radial relaxation of strain during epitaxy, the polarization field in the heterostractures is very small, compared to quantum wells. The surface recombination velocity on the nanowire sidewalls is ~ 103 cm/s. Emission in the range of 400-700 nm for InGaN nanowires and InGaN/GaN disks has been demonstrated. We demonstrate here, for the first time, the characteristics of a monolithic InGaN/GaN disk-in-nanowire room temperature electrically injected edge-emitting green laser (λ=533nm) on (001) Si. Nanowire lasers emitting at longer or shorter wavelengths can also be realized by varying the In content in the InGaN disks.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127236626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth process for high performance of InGaAs MOSFETs","authors":"Y. Miyamoto, T. Kanazawa, Y. Yonai, K. Ohsawa, Y. Mishima, T. Irisawa, M. Oda, T. Tezuka","doi":"10.1109/DRC.2014.6872380","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872380","url":null,"abstract":"To obtain high performance in nMOSFETs, the introduction of high-mobility channel material such as InGaAs is a promising approach. However, the required source doping concentration for a high driving current cannot be obtained by ion implantation in InGaAs. One method of achieving a heavily doped source in III-V semiconductor MOSFETs is by growing an epitaxial source/drain structure.1 For realizing such a source, we used a regrown InGaAs source2,3 and an InP source.4 The regrown sources are also important for high current drivability of 3D or multi-gate devices. The other advantage of regrowth in multi-gate devices is a smooth surface for high electron mobility.5 In this report, we describe the growth process for high-performance InGaAs MOSFETs.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127585281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Record high gain from InAs avalanche photodiodes at room temperature","authors":"Wenlu Sun, S. Maddox, S. Bank, J. Campbell","doi":"10.1109/DRC.2014.6872293","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872293","url":null,"abstract":"Avalanche photodiodes (APD) are important components in short-wave and mid-wave infrared detection systems (imaging, laser radar, communications, etc.) because their internal gain can improve receiver sensitivity and enables the detection of weak photon fluxes. The statistical nature of impact ionization in APDs contributes to excess shot noise, however. The excess noise factor, F(M), is related to the ratio of the electron and hole ionization coefficients, k, and multiplication, M, by F(M) = <;M<;sup>2<;/sup>>/<;M><;sup>2<;/sup> = k<;M> + (1-k)(2-1/<;M>). In the mid-infrared, HgCdTe APDs represent the current state-of-the-art; at liquid nitrogen temperatures, advanced devices offer excellent low noise characteristics with F(M) ~ 1, gains of >1000, and excellent dark currents. Unfortunately, devices that operate at shorter wavelengths exhibit degraded noise characteristics and significantly lower maximum gains <;30. This, when combined with the growth and fabrication challenges associated with II-VI compounds has motivated the search for alternative APD materials. InAs APDs, which offer a shorter wavelength cutoff wavelength of ~3 μm, have recently been found to exhibit F(M) ~ 1, with moderately low dark current at room temperature. Increasing the multiplication region thickness increases the gains achievable at low bias, which is beneficial for integration with Read Out-Integrated Circuits (ROICs). Therefore, to design a high-gain InAs APD, a thick multiplication region is required. This, in turn, necessitates extremely low background doping (<;1015 cm-3), or appropriate counter doping, in order to realize complete depletion and a uniform electric field profile. In this paper, we report record high-gain InAs APDs employing 6 μm-thick and 10 μm-thick intrinsic regions with low background doping of ~4×1014 cm-3, as determined by C-V profiling. An AlAsSb blocking layer was used in both structures to suppress electron diffusion current, the dominant dark current mechanism at room temperature. Significant reduction in dark current were critical to characterize these thicker multiplication regions at high gain, resulting in record high room temperature multiplication gain of ~300 at 15 V bias. This is ~6× the previous record for InAs of 50 at 15 V, as well as significantly higher than the maximum gain of 126 reported at higher biases, and represents a significant step forward in InAs APD performance.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129045470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The influence of NH3 plasma treatment on Al2O3/HfO2 gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel","authors":"Hau-Yuan Huang, Chien-Hung Wu, Shui-Jinn Wang, Kow-Ming Chang, H. Hsu","doi":"10.1109/DRC.2014.6872347","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872347","url":null,"abstract":"Indium-gallium-zinc-oxide (IGZO) thin-film transistors are fabricated by atmospheric pressure plasma jet (APPJ) technique. HfO₂ (25 nm) and Al₂O₃ (25 nm) are used as the gate dielectric stack. NH₃ plasma treatment is applied to optimize the device performance by reducing the gate dielectric leakage and increasing the oxide capacitance. The best performance of the APPJ IGZO TFT is obtained with a 30W-60s NH₃ plasma treatment with field-effect mobility of 6.1 cm²/V-s, subthreshold swing of 0.19 V/dec, and on/off current ratio of 10⁸.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125509309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization","authors":"Q. Smets, A. Verhulst, D. Lin, D. Verreck, C. Merckling, S. El Kazzi, K. Martens, J. Raskin, V. Thean, M. Heyns","doi":"10.1109/DRC.2014.6872298","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872298","url":null,"abstract":"Band-to-band tunneling (BTBT) in bulk group IV and III-V semiconductors is well known [1-2], but BTBT to confined layers is more difficult to calibrate experimentally. The latter occurs in most tunnel-FETs (TFET) and in particular in the promising line-TFETs [3,4]. It is predicted that field-induced quantum confinement (FIQC) and changing density of states near the semiconductor/oxide interface negatively impact the BTBT generation rate [5]. In order to gain insight while avoiding complicated TFET fabrication and analysis, we propose and demonstrate the BTBT MOS-capacitor (MOS-CAP) to characterize the onset and rate of BTBT perpendicular to the gate.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126784607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}