Hau-Yuan Huang, Chien-Hung Wu, Shui-Jinn Wang, Kow-Ming Chang, H. Hsu
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The influence of NH3 plasma treatment on Al2O3/HfO2 gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel
Indium-gallium-zinc-oxide (IGZO) thin-film transistors are fabricated by atmospheric pressure plasma jet (APPJ) technique. HfO2 (25 nm) and Al2O3 (25 nm) are used as the gate dielectric stack. NH3 plasma treatment is applied to optimize the device performance by reducing the gate dielectric leakage and increasing the oxide capacitance. The best performance of the APPJ IGZO TFT is obtained with a 30W-60s NH3 plasma treatment with field-effect mobility of 6.1 cm2/V-s, subthreshold swing of 0.19 V/dec, and on/off current ratio of 108.
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