Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond

Abstract

The voltage scaling capabilities of group IV, III-V and 2D-material DG-UTB FETs along the optimum transport direction and surface orientation were benchmarked with ITRS metrics from year 2018 and beyond. Our study shows that GaSb and Ge have the best voltage scalability for both n and pFET used in HP logic transistors. It was also found that InAs and In0.3Ga0.7Sb nFETs fail to meet the HP ON-current (ION) requirement due to smaller density of states (DOS). For LOP technology, Si and all 2D materials apart from MoS2 pFETs, meet the VDD requirements with Si and silicane offering better VDD scalability.