基于物理模型的平面内和垂直各向异性磁隧道结尺度分析

72nd Device Research Conference Pub Date : 2014-06-22 DOI:10.1109/DRC.2014.6872344

Jongyeon Kim, H Zhao, Yanfeng Jiang, A. Klemm, Jianping Wang, C. Kim

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引用次数: 16

摘要

本文全面研究了基于各种MTJ技术的STT-MRAM的可扩展性:即平面内MTJ (IMTJ)，晶体垂直MTJ (c-PMTJ)和界面垂直MTJ (i-PMTJ)。为了进行实际分析，我们的仿真模型通过将尺寸相关的有效各向异性场(HKeff)纳入Landau-Lifshitz-Gilbert (LLG)方程并考虑实际材料参数，捕捉了各种MTJs中STT切换的关键物理特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model

This paper presents a comprehensive study on the scalability of STT-MRAM based on various MTJ technologies: namely, in-plane MTJ (IMTJ), crystal perpendicular MTJ (c-PMTJ), and interface perpendicular MTJ (i-PMTJ). For a practical analysis, our simulation model captures key physics of STT switching in various MTJs by incorporating dimension-dependent effective anisotropy field (HKeff) into the Landau-Lifshitz-Gilbert (LLG) equation and considering realistic material parameters.

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72nd Device Research Conference

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