72nd Device Research Conference最新文献_第9页

First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors 首次单片集成基于gan的增强模式n沟道和p沟道异质结构场效应晶体管

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872396

H. Hahn, B. Reuters, S. Kotzea, G. Lukens, S. Geipel, H. Kalisch, A. Vescan

{"title":"First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors","authors":"H. Hahn, B. Reuters, S. Kotzea, G. Lukens, S. Geipel, H. Kalisch, A. Vescan","doi":"10.1109/DRC.2014.6872396","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872396","url":null,"abstract":"GaN-based devices have shown to be promising alternatives to Si-based devices in a wide range of applications. After covering several frequency bands in RF power amplification, GaN-based devices also penetrate into the power-switching market. Owing to the high carrier density and the high mobility in a 2-D electron gas (2DEG) and a large bandgap, GaN-based devices have shown great performance. These properties may also be exploited in digital logic applications, for which complementary logic offers the lowest power consumption. Hence, p-channel devices which employ a 2-D hole gas (2DHG) have attracted increasing research interest lately [1,2]. The recent progress of p-channel device characteristics [1] finally enables the monolithic integration of p- and n-channel transistors. Hence, complementary logic on basis of GaN (C-GaN) is within reach. As a first step towards C-GaN, the first report on the integration of enhancement mode (e-mode) n- and p-channel devices on a single wafer is presented. Challenges encountered are discussed and a first voltage transfer characteristic of an inverter structure is shown.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125636620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 33

RF performance of 3D III-V nanowire T-Gate HEMTs grown by VLS method VLS法生长3D III-V纳米线t栅hemt的射频性能

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872372

K. Chabak, Xin Miao, Chen Zhang, D. Walker, Xiuling Li

{"title":"RF performance of 3D III-V nanowire T-Gate HEMTs grown by VLS method","authors":"K. Chabak, Xin Miao, Chen Zhang, D. Walker, Xiuling Li","doi":"10.1109/DRC.2014.6872372","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872372","url":null,"abstract":"Continued down-scaling of digital and RF electronics has spawn new research efforts in various nanotechnologies such as 2D semiconducting sheets and nanowires as the conducting transistor channel. Nanoscale field-effect transistors (FETs) promise to bring power-efficient operation, improved short channel effects, and added functionalities beyond conventional top-down planar devices such as facile heterogeneous integration. So far, impressive results with fT > 400 GHz have been achieved with graphene FETs [1]. However, the highest achieved fmax for carbon-based devices is below 70 GHz [2] which is related to poor output conductance (gds) and weak channel modulation either from metallic carbon nanotubes or a metallic-like gapless graphene channel. While a high fT is important, FETs generally benefit from fmax > fT for amplification of RF signals [3]. III-V nanowires (NWs), on the other hand, retain well-known transport characteristics with inherent 3D profile for improved electrostatics. The most commonly used growth method for NWs is via the metal-assisted vapor-liquid-solid (VLS) mechanism. Several III-V NW FETs have been reported with excellent dc performance, but preference for NW growth to proceed normal to the substrate has stunted RF devices where arrays of NW channels are required to deliver sufficiently high raw current. Vertical InAs NW FETs have been reported with impressive 100+ GHz performance, but remain limited by challenging device fabrication and parasitic overlapping pad capacitance [4,5]. Both of these limitations can be avoided by growing high-density NW arrays along the surface of the substrate. Here, we present the first demonstration of VLS grown III-V NW channels self-assembled in parallel arrays with fT/fmax > 30/70+ GHz using a GaAs channel. These results are state-of-the-art for III-V NWs assembled in planar arrays.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129206270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ReRAM device performance study with Transition Metal Disulfide interfacial layer 过渡金属二硫化物界面层的ReRAM器件性能研究

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872342

Wenchao Lu, Wenbo Chen, Yibo Li, Prem Thapaliya, R. Jha

引用次数: 3

Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor 氮化镓基隧道热电子晶体管的室温负差分电阻

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872343

Z. C. Yang, D. Nath, S. Rajan

引用次数: 0

Detection of the conductive filament growth direction in resistive memories 电阻式存储器中导电丝生长方向的检测

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872415

E. Yalon, D. Kalaev, A. Gavrilov, S. Cohen, I. Riess, D. Ritter

{"title":"Detection of the conductive filament growth direction in resistive memories","authors":"E. Yalon, D. Kalaev, A. Gavrilov, S. Cohen, I. Riess, D. Ritter","doi":"10.1109/DRC.2014.6872415","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872415","url":null,"abstract":"Resistive switching random access memory (RRAM) is among the leading future non-volatile memory technologies; however, its implementation is hampered by the lack of full understanding of the switching and conduction mechanism as well as the lack of detailed physical models [1]. In particular, there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change memories (VCM). Filament growth is a key aspect in the operation of bipolar RRAM devices as it determines the polarity of the device as well as the “active” switching location. In some cases, it was shown directly by electron microscopy that filaments grow from the cathode towards the anode during forming, as in typical electrochemical metallization (ECM) cells [2]. In other cases, it was concluded indirectly that filaments originate from the anode [3]. Electron microscopy of filaments is highly challenging, and reports are scarce. Here, we show that the metal-insulator-semiconductor bipolar transistor structure can be used to detect the direction of growth of the conductive filament, and apply this procedure to validate our model of the dynamics of filament growth [4].","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133838220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Indoor photovoltaic energy harvesting for mm-scale systems 毫米级系统的室内光伏能量收集

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872392

A. Teran, M. Dejarld, Jinyoung Hwang, Wootaek Lim, Joeson Wong, D. Blaauw, Yoonmyung Lee, J. Millunchick, J. Phillips

{"title":"Indoor photovoltaic energy harvesting for mm-scale systems","authors":"A. Teran, M. Dejarld, Jinyoung Hwang, Wootaek Lim, Joeson Wong, D. Blaauw, Yoonmyung Lee, J. Millunchick, J. Phillips","doi":"10.1109/DRC.2014.6872392","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872392","url":null,"abstract":"Low power electronic circuitry, including wirelessly interconnected sensor nodes, is a transformational technology that can be applied to a broad range of applications. These low power systems still require electrical power, ideally from ambient energy sources. Ambient sources of light can provide sufficient energy for these applications. Stray sunlight is more than adequate, though it is not available in all locations. Indoor lighting may also provide a sufficient energy source, though the characteristics of the spectrum are significantly different than the solar spectrum, where irradiance is confined to a narrower window in the visible spectrum. Energy-autonomous operation in mm-scale sensors have been achieved using photovoltaics based on silicon CMOS [1,2]. Improvements in energy harvesting are necessary to increase the duty cycle of the microsystem and to facilitate wireless transceivers. Photovoltaic cells consisting of materials with larger bandgap energy, such as GaAs, provide a better match to the indoor light spectrum, reducing thermalization losses and increasing power generation. The larger voltage provided by higher bandgap materials such as GaAs can also improve the efficiency of the overall system, where higher voltages are beneficial for the battery storage system and DC-DC converter. While the cost of GaAs photovoltaics is significantly higher than for silicon, and is currently prohibitive for large area solar energy production, the small power requirements and associated size requirements for photovoltaic cells makes GaAs an affordable option. Requirements for active and standby power are 10μW and 0.5nW, respectively[1,2], where perpetual operation may be achieved using a photovoltaic cell with area on the order of 1 mm2.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134175572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Critical binding energy for exciton dissociation and its implications for the thermodynamic limit of organic photovoltaics 激子解离的临界结合能及其对有机光伏电池热力学极限的影响

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872406

M. Khan, M. Alam

{"title":"Critical binding energy for exciton dissociation and its implications for the thermodynamic limit of organic photovoltaics","authors":"M. Khan, M. Alam","doi":"10.1109/DRC.2014.6872406","DOIUrl":"https://doi.org/10.1109/DRC.2014.6872406","url":null,"abstract":"Spectroscopic signatures of strongly bound excitons (binding energy, EB) in various low dielectric constant materials and reduced dimensional systems, such as CNT transistors, Quantum well lasers, etc. are often erased during room temperature, high-field, high-power-density operation of these devices. Similarly, while pump-probe experiments have been used extensively to explore exciton dynamics in organic photovoltaics (OPVs), one wonders if the exciton bottlenecks would persist under continuous broadband illumination of OPV. In this paper, we use a self-consistent thermodynamic model (involving detailed-balance and energy-conservation) to explicitly model the kinetics of exciton dissociation and corresponding energy balance considerations [1,2]. We find that exciton bottleneck may arise under normal PV operation if and only if the exciton binding energy, EB > B(critical) ≡ (ptherm + ΔE)× Jsc/Jopt, where Jsc and Jopt are the short-circuit and maximum power point currents, with the ratio~1; the thermalization per carrier is given by ptherm ≈ Ptherm/(JSC) ≈ ((4+ξ+6/ξ)/(2+ξ)) kTs (for an ideal blackbody source), with ξ = EG/kTs. And, ΔE is the type-II band-discontinuity of a bulk-heterojunction (BHJ) cell. We predict that all signatures of exciton-limited performance of OPV would be eased if EB <; EB(critical), and the operation of an OPV would be indistinguishable from their classical counterparts.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"13 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130042534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The spin switch oscillator: A new approach based on gain and feedback 自旋开关振荡器:一种基于增益和反馈的新方法

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872412

V. Diep, S. Datta

引用次数: 5

High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM 用于3D RRAM的高性能430°C以下外延硅PIN选择器

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872387

R. Mandapati, S. Shrivastava, B. Das, Sushama, V. Ostwal, J. Schulze, U. Ganguly

引用次数: 4

Hybrid spintronics-straintronic nanomagnetic logic with two-state elliptical and four-state concave magnetostrictive nanomagnets 具有两态椭圆和四态凹磁致伸缩纳米磁体的混合自旋电子-应变电子纳米磁逻辑

72nd Device Research Conference Pub Date : 2014-06-22 DOI: 10.1109/DRC.2014.6872321

N. D’Souza, M. Salehi-Fashami, Supriyo Bandyopadhyay, J. Atulasimha

引用次数: 3