RF performance of 3D III-V nanowire T-Gate HEMTs grown by VLS method

K. Chabak, Xin Miao, Chen Zhang, D. Walker, Xiuling Li
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Abstract

Continued down-scaling of digital and RF electronics has spawn new research efforts in various nanotechnologies such as 2D semiconducting sheets and nanowires as the conducting transistor channel. Nanoscale field-effect transistors (FETs) promise to bring power-efficient operation, improved short channel effects, and added functionalities beyond conventional top-down planar devices such as facile heterogeneous integration. So far, impressive results with fT > 400 GHz have been achieved with graphene FETs [1]. However, the highest achieved fmax for carbon-based devices is below 70 GHz [2] which is related to poor output conductance (gds) and weak channel modulation either from metallic carbon nanotubes or a metallic-like gapless graphene channel. While a high fT is important, FETs generally benefit from fmax > fT for amplification of RF signals [3]. III-V nanowires (NWs), on the other hand, retain well-known transport characteristics with inherent 3D profile for improved electrostatics. The most commonly used growth method for NWs is via the metal-assisted vapor-liquid-solid (VLS) mechanism. Several III-V NW FETs have been reported with excellent dc performance, but preference for NW growth to proceed normal to the substrate has stunted RF devices where arrays of NW channels are required to deliver sufficiently high raw current. Vertical InAs NW FETs have been reported with impressive 100+ GHz performance, but remain limited by challenging device fabrication and parasitic overlapping pad capacitance [4,5]. Both of these limitations can be avoided by growing high-density NW arrays along the surface of the substrate. Here, we present the first demonstration of VLS grown III-V NW channels self-assembled in parallel arrays with fT/fmax > 30/70+ GHz using a GaAs channel. These results are state-of-the-art for III-V NWs assembled in planar arrays.
VLS法生长3D III-V纳米线t栅hemt的射频性能
数字和射频电子产品的持续缩小,催生了各种纳米技术的新研究成果,如二维半导体片和纳米线作为导电晶体管通道。纳米场效应晶体管(fet)有望带来高效节能的操作,改善短通道效应,并增加传统自上而下平面器件之外的功能,如易于异构集成。到目前为止,石墨烯场效应管已经取得了fT > 400 GHz的令人印象深刻的结果[1]。然而,碳基器件实现的最高fmax低于70 GHz[2],这与金属碳纳米管或金属样无间隙石墨烯通道的输出电导(gds)差和弱通道调制有关。虽然高fT很重要,但fet通常受益于fmax > fT来放大RF信号[3]。另一方面,III-V纳米线(NWs)保留了众所周知的传输特性,具有固有的3D轮廓,可以改善静电性能。NWs最常用的生长方法是通过金属辅助气液固(VLS)机制。据报道,几种III-V型NW场效应管具有优异的直流性能,但倾向于NW生长与衬底正常进行,这阻碍了需要NW通道阵列来提供足够高的原始电流的RF器件。据报道,垂直InAs NW fet具有令人印象深刻的100+ GHz性能,但仍然受到器件制造和寄生重叠焊盘电容的限制[4,5]。这两种限制都可以通过沿着衬底表面生长高密度NW阵列来避免。在这里,我们首次展示了使用GaAs通道在fT/fmax > 30/70+ GHz的平行阵列中自组装的VLS生长III-V NW通道。这些结果是在平面阵列中组装的III-V NWs的最新技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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