Detection of the conductive filament growth direction in resistive memories

E. Yalon, D. Kalaev, A. Gavrilov, S. Cohen, I. Riess, D. Ritter
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引用次数: 5

Abstract

Resistive switching random access memory (RRAM) is among the leading future non-volatile memory technologies; however, its implementation is hampered by the lack of full understanding of the switching and conduction mechanism as well as the lack of detailed physical models [1]. In particular, there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change memories (VCM). Filament growth is a key aspect in the operation of bipolar RRAM devices as it determines the polarity of the device as well as the “active” switching location. In some cases, it was shown directly by electron microscopy that filaments grow from the cathode towards the anode during forming, as in typical electrochemical metallization (ECM) cells [2]. In other cases, it was concluded indirectly that filaments originate from the anode [3]. Electron microscopy of filaments is highly challenging, and reports are scarce. Here, we show that the metal-insulator-semiconductor bipolar transistor structure can be used to detect the direction of growth of the conductive filament, and apply this procedure to validate our model of the dynamics of filament growth [4].
电阻式存储器中导电丝生长方向的检测
电阻开关随机存取存储器(RRAM)是未来主要的非易失性存储器技术之一;然而,由于缺乏对开关和传导机制的充分了解以及缺乏详细的物理模型,其实施受到阻碍[1]。特别是关于价变记忆(VCM)中导电丝的生长方向,文献中有相互矛盾的报道。灯丝生长是双极RRAM器件运行中的一个关键方面,因为它决定了器件的极性以及“有源”开关位置。在某些情况下,电子显微镜直接显示,在形成过程中,细丝从阴极向阳极生长,如典型的电化学金属化(ECM)电池[2]。在其他情况下,则间接得出细丝源自阳极的结论[3]。细丝的电子显微镜观察极具挑战性,相关报道很少。在这里,我们展示了金属-绝缘体-半导体双极晶体管结构可以用来检测导电灯丝的生长方向,并应用这一过程来验证我们的灯丝生长动力学模型[4]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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