First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors

H. Hahn, B. Reuters, S. Kotzea, G. Lukens, S. Geipel, H. Kalisch, A. Vescan
{"title":"First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors","authors":"H. Hahn, B. Reuters, S. Kotzea, G. Lukens, S. Geipel, H. Kalisch, A. Vescan","doi":"10.1109/DRC.2014.6872396","DOIUrl":null,"url":null,"abstract":"GaN-based devices have shown to be promising alternatives to Si-based devices in a wide range of applications. After covering several frequency bands in RF power amplification, GaN-based devices also penetrate into the power-switching market. Owing to the high carrier density and the high mobility in a 2-D electron gas (2DEG) and a large bandgap, GaN-based devices have shown great performance. These properties may also be exploited in digital logic applications, for which complementary logic offers the lowest power consumption. Hence, p-channel devices which employ a 2-D hole gas (2DHG) have attracted increasing research interest lately [1,2]. The recent progress of p-channel device characteristics [1] finally enables the monolithic integration of p- and n-channel transistors. Hence, complementary logic on basis of GaN (C-GaN) is within reach. As a first step towards C-GaN, the first report on the integration of enhancement mode (e-mode) n- and p-channel devices on a single wafer is presented. Challenges encountered are discussed and a first voltage transfer characteristic of an inverter structure is shown.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33

Abstract

GaN-based devices have shown to be promising alternatives to Si-based devices in a wide range of applications. After covering several frequency bands in RF power amplification, GaN-based devices also penetrate into the power-switching market. Owing to the high carrier density and the high mobility in a 2-D electron gas (2DEG) and a large bandgap, GaN-based devices have shown great performance. These properties may also be exploited in digital logic applications, for which complementary logic offers the lowest power consumption. Hence, p-channel devices which employ a 2-D hole gas (2DHG) have attracted increasing research interest lately [1,2]. The recent progress of p-channel device characteristics [1] finally enables the monolithic integration of p- and n-channel transistors. Hence, complementary logic on basis of GaN (C-GaN) is within reach. As a first step towards C-GaN, the first report on the integration of enhancement mode (e-mode) n- and p-channel devices on a single wafer is presented. Challenges encountered are discussed and a first voltage transfer characteristic of an inverter structure is shown.
首次单片集成基于gan的增强模式n沟道和p沟道异质结构场效应晶体管
基于氮化镓的器件在广泛的应用中已被证明是硅基器件的有前途的替代品。在覆盖了射频功率放大的多个频段之后,基于gan的器件也进入了功率开关市场。由于在二维电子气体(2DEG)中的高载流子密度和高迁移率以及大带隙,氮化镓基器件表现出优异的性能。这些特性也可用于数字逻辑应用,其中互补逻辑提供最低的功耗。因此,采用二维孔气体(2DHG)的p通道器件最近引起了越来越多的研究兴趣[1,2]。p沟道器件特性[1]的最新进展最终使p沟道和n沟道晶体管的单片集成成为可能。因此,基于GaN (C-GaN)的互补逻辑是可以实现的。作为迈向C-GaN的第一步,本文提出了在单晶圆上集成增强模式(e模式)n通道和p通道器件的第一份报告。讨论了所遇到的挑战,并展示了逆变器结构的第一电压传递特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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