ReRAM device performance study with Transition Metal Disulfide interfacial layer

Wenchao Lu, Wenbo Chen, Yibo Li, Prem Thapaliya, R. Jha
{"title":"ReRAM device performance study with Transition Metal Disulfide interfacial layer","authors":"Wenchao Lu, Wenbo Chen, Yibo Li, Prem Thapaliya, R. Jha","doi":"10.1109/DRC.2014.6872342","DOIUrl":null,"url":null,"abstract":"Transition Metal Oxide (TMO) based resistive random access memory (ReRAM) devices have been a topic of extensive research in the recent years [1]. However, in spite of significant research progress in this area, there are several pending issues that need to be studied. Of these several issues, two of the major issues lie in reducing the electroforming (EF) voltage, and reset current in the current state of the art ReRAM devices. To address these issues, we investigated the impact of inserting an ultra-thin interfacial layer (IL) of Transition Metal Disulfide (TMD) based on WS2 on the switching characteristics of HfO2 based ReRAM devices. Our studies indicated that the incorporation of WS2 IL resulted in a significant reduction in the EF voltage and reset current compared to the control devices. This observation indicates the possibility of achieving low-switching energy ReRAM devices by optimization of TMO/TMD interface and thicknesses.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Transition Metal Oxide (TMO) based resistive random access memory (ReRAM) devices have been a topic of extensive research in the recent years [1]. However, in spite of significant research progress in this area, there are several pending issues that need to be studied. Of these several issues, two of the major issues lie in reducing the electroforming (EF) voltage, and reset current in the current state of the art ReRAM devices. To address these issues, we investigated the impact of inserting an ultra-thin interfacial layer (IL) of Transition Metal Disulfide (TMD) based on WS2 on the switching characteristics of HfO2 based ReRAM devices. Our studies indicated that the incorporation of WS2 IL resulted in a significant reduction in the EF voltage and reset current compared to the control devices. This observation indicates the possibility of achieving low-switching energy ReRAM devices by optimization of TMO/TMD interface and thicknesses.
过渡金属二硫化物界面层的ReRAM器件性能研究
基于过渡金属氧化物(TMO)的电阻式随机存取存储器(ReRAM)器件是近年来广泛研究的一个课题。然而,尽管这一领域的研究取得了重大进展,但仍有几个悬而未决的问题需要研究。在这几个问题中,两个主要问题在于降低电铸(EF)电压,以及当前最先进的ReRAM器件的复位电流。为了解决这些问题,我们研究了在WS2上插入超薄过渡金属二硫化物(TMD)界面层(IL)对基于HfO2的ReRAM器件开关特性的影响。我们的研究表明,与控制装置相比,WS2 IL的掺入导致EF电压和复位电流显著降低。这一观察结果表明,通过优化TMO/TMD界面和厚度,可以实现低开关能量的ReRAM器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信