R. Mandapati, S. Shrivastava, B. Das, Sushama, V. Ostwal, J. Schulze, U. Ganguly
{"title":"High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM","authors":"R. Mandapati, S. Shrivastava, B. Das, Sushama, V. Ostwal, J. Schulze, U. Ganguly","doi":"10.1109/DRC.2014.6872387","DOIUrl":null,"url":null,"abstract":"The high performance of Si based selection devices is constrained by the high processing temperature requirement (>700°C) for 3D storage memory application. Many high performance Si based selection devices have been demonstrated. Epitaxial [1] and poly PN junction diodes [2-3] have been demonstrated for unipolar RRAM while epitaxial NPN punch-through diodes [4] has been developed for bipolar RRAM as summarized in Table 1. However, Si based selection devices require high temperature (>700°C) epitaxy, CVD, or crystallization. The main challenges for low temperature process are (i) high dopant activation for on-current density (ii) low defects for low off-current. In this paper, we demonstrate that sub-430°C temperature Si diodes by Si MBE with excellent performance. 3D stacking by various strategies e.g. lateral epitaxial overgrowth on seed hole [5], is enabled by back-end compatible temperature of epitaxy.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The high performance of Si based selection devices is constrained by the high processing temperature requirement (>700°C) for 3D storage memory application. Many high performance Si based selection devices have been demonstrated. Epitaxial [1] and poly PN junction diodes [2-3] have been demonstrated for unipolar RRAM while epitaxial NPN punch-through diodes [4] has been developed for bipolar RRAM as summarized in Table 1. However, Si based selection devices require high temperature (>700°C) epitaxy, CVD, or crystallization. The main challenges for low temperature process are (i) high dopant activation for on-current density (ii) low defects for low off-current. In this paper, we demonstrate that sub-430°C temperature Si diodes by Si MBE with excellent performance. 3D stacking by various strategies e.g. lateral epitaxial overgrowth on seed hole [5], is enabled by back-end compatible temperature of epitaxy.