High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM

R. Mandapati, S. Shrivastava, B. Das, Sushama, V. Ostwal, J. Schulze, U. Ganguly
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引用次数: 4

Abstract

The high performance of Si based selection devices is constrained by the high processing temperature requirement (>700°C) for 3D storage memory application. Many high performance Si based selection devices have been demonstrated. Epitaxial [1] and poly PN junction diodes [2-3] have been demonstrated for unipolar RRAM while epitaxial NPN punch-through diodes [4] has been developed for bipolar RRAM as summarized in Table 1. However, Si based selection devices require high temperature (>700°C) epitaxy, CVD, or crystallization. The main challenges for low temperature process are (i) high dopant activation for on-current density (ii) low defects for low off-current. In this paper, we demonstrate that sub-430°C temperature Si diodes by Si MBE with excellent performance. 3D stacking by various strategies e.g. lateral epitaxial overgrowth on seed hole [5], is enabled by back-end compatible temperature of epitaxy.
用于3D RRAM的高性能430°C以下外延硅PIN选择器
硅基选择器件的高性能受到3D存储存储器应用的高加工温度要求(>700°C)的限制。许多高性能的硅基选择装置已经被证明。外延[1]和聚PN结二极管[2-3]已被证明用于单极RRAM,而外延NPN穿孔二极管[4]已被开发用于双极RRAM,如表1所示。然而,硅基选择器件需要高温(>700°C)外延,CVD或结晶。低温工艺面临的主要挑战是:(1)导通电流密度下的高掺杂激活;(2)低关断电流下的低缺陷。在本文中,我们证明了硅MBE在430°C以下的温度下具有优异的性能。外延的后端兼容温度可以实现多种策略的3D堆叠,例如在种孔上的横向外延过度生长[5]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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