Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor

72nd Device Research Conference Pub Date : 2014-06-22 DOI:10.1109/DRC.2014.6872343

Z. C. Yang, D. Nath, S. Rajan

引用次数: 0

Abstract

In this work, we use ballistic quantum transport in a III-nitride to realize room temperature negative differential resistance (NDR) in a GaN-based Tunneling Hot Electron Transistor. The results showed reproducible double-sweep characteristics, with peak-to-valley ratio (PVCR) of 7.2 and peak current density (PCD) about 143 A/cm2. This is the first report of repeatable room temperature negative differential resistance in a III-nitride device.

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氮化镓基隧道热电子晶体管的室温负差分电阻

在这项工作中，我们使用iii -氮化物中的弹道量子输运来实现基于gan的隧道热电子晶体管的室温负差分电阻(NDR)。结果表明，双扫描特性可重复，峰谷比(PVCR)为7.2，峰值电流密度(PCD)约为143 A/cm2。这是在iii -氮化物器件中首次报道可重复室温负差分电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

72nd Device Research Conference

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