{"title":"Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor","authors":"Z. C. Yang, D. Nath, S. Rajan","doi":"10.1109/DRC.2014.6872343","DOIUrl":null,"url":null,"abstract":"In this work, we use ballistic quantum transport in a III-nitride to realize room temperature negative differential resistance (NDR) in a GaN-based Tunneling Hot Electron Transistor. The results showed reproducible double-sweep characteristics, with peak-to-valley ratio (PVCR) of 7.2 and peak current density (PCD) about 143 A/cm2. This is the first report of repeatable room temperature negative differential resistance in a III-nitride device.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we use ballistic quantum transport in a III-nitride to realize room temperature negative differential resistance (NDR) in a GaN-based Tunneling Hot Electron Transistor. The results showed reproducible double-sweep characteristics, with peak-to-valley ratio (PVCR) of 7.2 and peak current density (PCD) about 143 A/cm2. This is the first report of repeatable room temperature negative differential resistance in a III-nitride device.