M. Akbulut, F. Dirisaglik, A. Cywar, A. Faraclas, D. Pence, J. Patel, S. Steen, R. Nunes, H. Silva, A. Gokirmak
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Investigation of electrostatic body control in accumulated body MOSFETs
The authors previously reported wide-range threshold voltage (VT) control and improvement in subthreshold slope (SS) and drain induced barrier lowering (DIBL) in narrow bulk Si Accumulated Body MOSFETs [1-3]. The side-gate structure surrounding the MOSFET body is used for accumulating the body through an independent contact to provide these effects (Fig. 1). In this work, we present a study on the electrostatic body control attained by the side-gates, using experimental and simulated devices.
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