The piezoelectric transformer field effect transistor

S. Agarwal, E. Yablonovitch
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引用次数: 1

Abstract

In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Unfortunately, conventional transistors fundamentally require around half a volt to switch. On the other hand, electrical wires only need millivolts to overcome noise and communicate information. This voltage mismatch results in a significant amount of power being wasted by charging the wires to a high voltage. To overcome this mismatch, either a new low voltage switch[1-5] or a voltage transformer is needed. In this paper we propose a new CMOS compatible piezoelectric voltage transformer that can be placed on the gate of each transistor to reduce the voltage needed for switching. This allows for a low voltage to be used to charge the wires while increasing the voltage at the transistor where it's needed. This results in the Piezoelectric Transformer Field Effect Transistor, or PT-FET.
压电变压器场效应晶体管
为了降低现代电子产品的功耗,需要显著降低工作电压。不幸的是,传统的晶体管基本上需要大约半伏特的电压才能切换。另一方面,电线只需要毫伏电压就能克服噪音和传递信息。这种电压不匹配导致大量的电力被浪费在电线充电到高电压。为了克服这种不匹配,需要一个新的低压开关[1-5]或电压互感器。在本文中,我们提出了一种新的CMOS兼容压电电压互感器,可以放置在每个晶体管的栅极上,以降低开关所需的电压。这允许使用低电压给电线充电,同时在晶体管需要的地方增加电压。这就产生了压电变压器场效应晶体管(PT-FET)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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