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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献

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Bond Pad Optimization for CMOS Imager with Chip Scale Package 芯片级封装CMOS成像仪键合垫优化
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251037
R. J. Rassel, W. Guthrie, J. Gambino, J. Maloney, M. Stidham, E. Sprogis, J. Adkisson, M. Jaffe
{"title":"Bond Pad Optimization for CMOS Imager with Chip Scale Package","authors":"R. J. Rassel, W. Guthrie, J. Gambino, J. Maloney, M. Stidham, E. Sprogis, J. Adkisson, M. Jaffe","doi":"10.1109/IPFA.2006.251037","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251037","url":null,"abstract":"Three novel CSP pad designs in a 0.18mum CMOS image sensor Cu interconnect technology were analyzed for use with a wafer level CSP (WLCSP) package. The CSP pad designs used various combinations of available aluminum and tungsten interconnect levels in order to improve the cross-sectional area without increasing the total stack height of the Cu interconnect technology. It was found that by increasing the cross-sectional area of the CSP pads the T-connections formed in the CSP process had improved (tighter) resistance distributions","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130440214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Binding Energy of Al Hexafluoride [AlF6]3- in X-Ray Photoelectron Spectroscopy 六氟化铝[AlF6]3-在x射线光电子能谱中的结合能表征
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251033
H. Younan
{"title":"Characterization of Binding Energy of Al Hexafluoride [AlF6]3- in X-Ray Photoelectron Spectroscopy","authors":"H. Younan","doi":"10.1109/IPFA.2006.251033","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251033","url":null,"abstract":"X-ray photoelectron spectroscopy/electron spectroscopy for chemical analysis (XPS/ESCA) is being widely used in failure analysis of semiconductor industries and wafer fabrication, as it is able to provide not only elemental information, but also chemical binding information. For example, using its fingerprint of C=O, we are able to identify possible root causes of carbon contamination in wafer fabrication (fab). In wafer fab, it is also being successfully used in failure analysis for Al fluorides on microchip Al bondpads. It is well known fact that it is difficult or impossible for us to fully free fluorine (F) from Al bondpads if F-based chemical gases such as CF4 and CHF3 are used for Al bondpad opening process in wafer fab. However, it is possible to reduce and control the F contamination to within the background/baseline level, which will not affect the bonding process at assembly houses","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127211728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The Scanning Confocal Electron Microscope: A New Tool for Defect Studies in Semiconductor Devices 扫描共聚焦电子显微镜:半导体器件缺陷研究的新工具
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.250995
N. Zaluzec
{"title":"The Scanning Confocal Electron Microscope: A New Tool for Defect Studies in Semiconductor Devices","authors":"N. Zaluzec","doi":"10.1109/IPFA.2006.250995","DOIUrl":"https://doi.org/10.1109/IPFA.2006.250995","url":null,"abstract":"This work illustrates succinctly the ability of the SCEM to provide valuable information for metrological studies of thick non-optically transparent semiconductor devices. The utility of SCEM to failure analysis comes from its ability to provide relatively high-resolution images from extremely thick specimens. In this way, the instrument can bridge the gap between optical SCOM useful for observing features few microns in size, to TEM which can resolve atomic sized structures but requiring specimens less than 100 nm thick to reach this resolution. The main advantage of SCEM for failure analysis in semiconductor manufacturing is to investigate defects or devices without the need to significantly de-capsulate or cross-section to thickness typically employed by TEM/STEM observations. This allows un-disturbed observation of embedded defects. Depth of field and focus of the SCEM, like the SCOM are limited by the pre and post specimen convergence angles. With the advent of aberration correctors this aspect of the SCEM will become an even more useful tool","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129226346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of FIB Circuit Edit and Electrical Characterization in Failure Analysis for Invisible Defect Issues FIB电路编辑与电特性在故障分析中的应用
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251027
Z.G. Song, S. K. Loh, S. P. Neo, X. Zheng, H.T. Teo
{"title":"Application of FIB Circuit Edit and Electrical Characterization in Failure Analysis for Invisible Defect Issues","authors":"Z.G. Song, S. K. Loh, S. P. Neo, X. Zheng, H.T. Teo","doi":"10.1109/IPFA.2006.251027","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251027","url":null,"abstract":"As semiconductor process technology rapidly develops into deep-sub-micron or nanometer regime, the feature size of semiconductor devices continues to shrink down. As a result, the defect being able to cause a device malfunction is also becoming smaller and smaller, and even certain defect is invisible with high-resolution SEM or TEM. It makes conventional physical failure analysis (PFA) face a great challenge for deep-sub-micron processed devices and the PFA success rate decrease because of such tiny or invisible defects. Thus electrical failure analysis (EFA) is becoming more and more important. FIB circuit edit and electrical characterization can provide critical clues of the failure mechanism through diagnosing the behaviour of a suspected defective transistor even if the defect is invisible with high-resolution SEM and TEM. This paper has demonstrated its application in failure analysis for two cases of invisible defect issues","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129311185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
The New Concept for Particle Remove in Wet Bench Cleaning 湿式工作台清洗中颗粒去除的新概念
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251015
S. Chen, Shengdi Chen, Long-Yeu Chung, W. Yeh
{"title":"The New Concept for Particle Remove in Wet Bench Cleaning","authors":"S. Chen, Shengdi Chen, Long-Yeu Chung, W. Yeh","doi":"10.1109/IPFA.2006.251015","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251015","url":null,"abstract":"For the manufacturing of submicron or deep submicron ULSIs, it is important to completely suppress particles and contamination created on the silicon wafer surface. The tradition concept for cleaning need was used chemical content (APM, ammonia and hydrogen peroxide mixtures) to play a major role. Unfortunately, the SC-1 (APM) had negative effect on surface damage. In recent years, it has been modified to incorporate a more dilute solution in order to reduce surface micro-roughness caused by ammonium hydroxide. In this paper, a new thinking was proposed to use DI water quick dump rinse (QDR) mode change from conversation set-up to an improvement mode. A modified recipe with modified using DIW can totally remove the particle during process","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117004465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Tiny Pitts are the Yield Major Killer Caused by Metal Contamination in Wet Bench Cleaning 小皮点是湿式工作台清洗中金属污染导致产量下降的主要原因
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251013
S. Chen, Shengdi Chen, Long-Yeu Chung, W. Yeh
{"title":"Tiny Pitts are the Yield Major Killer Caused by Metal Contamination in Wet Bench Cleaning","authors":"S. Chen, Shengdi Chen, Long-Yeu Chung, W. Yeh","doi":"10.1109/IPFA.2006.251013","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251013","url":null,"abstract":"In this paper, we analyzed the contamination of heavy metals on process wafers before gate oxide deposition. A lot of mushrooms-like defects were easy found in wafer edge. And at that time, a lot of pits also can be found in active region of device, as the silicon substrate had been with heavy metallic contamination. TEM and EDS analysis were used to examine the mushrooms type defects and pits defects. A reasonable mechanism was proposed to check the problem stage of manufacturing process","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116788776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TetraMax Diagnosis and Laker Software on Failure Analysis For ATPG/Scan Failures TetraMax诊断和Laker软件对ATPG/Scan故障的故障分析
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251034
A. G. Boon, Chan Choon Kit, C. Keng, Oh Chong Khiam
{"title":"TetraMax Diagnosis and Laker Software on Failure Analysis For ATPG/Scan Failures","authors":"A. G. Boon, Chan Choon Kit, C. Keng, Oh Chong Khiam","doi":"10.1109/IPFA.2006.251034","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251034","url":null,"abstract":"Scan/ATPG failures have been one of the main failures contributing to low yield issues and problems in microelectronics. In this paper, the beauty of the TetraMax diagnosis together with the Laker diagnosis software which serve as a complement was discussed, as they are one of the key diagnosis tools currently in the industry to analyze the scan/ATPG failures. The concept of the scan test, the files required to run TetraMax diagnosis, the use of the generated failing nets to convert into failing paths as well as the capability of the Laker software in identifying the particular suspected defective metal, via, poly, contact, active line in the failing path will be discussed together with case studies to illustrate it. This paper served as a useful reading material to wafer fabrication that has the intention of developing such capability in resolving their ATPG/scan failure issues","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114238030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Carbon Nanotube Interconnects in Electrical and Biological Systems 碳纳米管互连在电气和生物系统
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251046
Q. Ngo, E. de Asis, A. Seger, L. Wang, W. Wong, M. Isaacson, C. Yang
{"title":"Carbon Nanotube Interconnects in Electrical and Biological Systems","authors":"Q. Ngo, E. de Asis, A. Seger, L. Wang, W. Wong, M. Isaacson, C. Yang","doi":"10.1109/IPFA.2006.251046","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251046","url":null,"abstract":"Recent fundamental studies have given rise to the emergence of new applications for carbon-based nanostructures in electrical and biological systems. In this paper, our recent work investigating the utility of carbon nanotube (CNT) and carbon nanofiber (CNF) devices in electrical and biological interconnect systems is reviewed. Electrical and structural characterizations of carbon nanostructure arrays are performed to assess the viability of these novel forms of carbon for interconnect applications. Structural information of carbon nanofiber arrays obtained with high-resolution scanning transmission electron microscopy (STEM) are correlated with electrical characteristics using a semi-empirical model developed based on graphite conduction principles. Concurrently, a microelectrode array consisting of a two-dimensional (2D) pattern of CNT recording sites is used to detect the electrical signals in embryonic rat hippocampal neurons in vitro. This experiment demonstrates the viability of using CNT to electrically probe living cells","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125358729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Wire Thickness on Electromigration and Stress Migration Lifetime of Cu 线材厚度对Cu电迁移和应力迁移寿命的影响
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.250985
C. Christiansen, J. Gambino, J. Therrien, D. Hunt, J. Gill
{"title":"Effect of Wire Thickness on Electromigration and Stress Migration Lifetime of Cu","authors":"C. Christiansen, J. Gambino, J. Therrien, D. Hunt, J. Gill","doi":"10.1109/IPFA.2006.250985","DOIUrl":"https://doi.org/10.1109/IPFA.2006.250985","url":null,"abstract":"Electromigration and stress migration lifetimes are characterized as a function of metal thickness for Cu interconnects fabricated using 0.13 mum process technology. The stress migration lifetime decreases as metal thickness decreases, consistent with previous studies. The electromigration lifetime shows a more complicated dependence on metal thickness. For vias landing on narrow lines, the electromigration lifetime can actually be longer for thin wires (50 nm) than for thick wires (400 nm), because the via is more likely to touch the liner of the underlying metal as wire thickness decreases. In contrast, for vias landing on wide lines (and for vias landing on narrow lines at short stress times), the electromigration lifetime is independent of wire thickness","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122662117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Alternate Conductive Atomic Force Microscope with Scanning Capacitance Microscope to Catch Hidden Defect 导电原子力显微镜与扫描电容显微镜交替观察隐藏缺陷
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251032
T. Chuang, C. Shen, S.C. Lin, J.H. Chou
{"title":"Alternate Conductive Atomic Force Microscope with Scanning Capacitance Microscope to Catch Hidden Defect","authors":"T. Chuang, C. Shen, S.C. Lin, J.H. Chou","doi":"10.1109/IPFA.2006.251032","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251032","url":null,"abstract":"This paper described how to use conductive atomic force microscope (C-AFM) and scanning capacitance microscope (SCM) alternately to catch very tiny and cunning defect modes hidden in the indiscernible corner. These schemes are easily implemented with standard equipment already present in most failure analysis laboratories, and could overcome some encountered judge problems","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131061720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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