导电原子力显微镜与扫描电容显微镜交替观察隐藏缺陷

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251032

T. Chuang, C. Shen, S.C. Lin, J.H. Chou

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引用次数: 0

摘要

本文介绍了如何交替使用导电原子力显微镜(C-AFM)和扫描电容显微镜(SCM)捕捉隐藏在不可见角落的非常微小和狡猾的缺陷模式。这些方案很容易在大多数失效分析实验室已有的标准设备上实现，并且可以克服一些遇到的判断问题

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Alternate Conductive Atomic Force Microscope with Scanning Capacitance Microscope to Catch Hidden Defect

This paper described how to use conductive atomic force microscope (C-AFM) and scanning capacitance microscope (SCM) alternately to catch very tiny and cunning defect modes hidden in the indiscernible corner. These schemes are easily implemented with standard equipment already present in most failure analysis laboratories, and could overcome some encountered judge problems

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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