六氟化铝[AlF6]3-在x射线光电子能谱中的结合能表征

H. Younan
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引用次数: 6

摘要

x射线光电子能谱/化学分析电子能谱(XPS/ESCA)不仅可以提供元素信息,还可以提供化学结合信息,因此在半导体工业和晶圆制造的失效分析中得到了广泛的应用。例如,利用其C=O的指纹,我们能够识别晶圆制造(fab)中碳污染的可能根本原因。在晶圆厂,它也被成功地应用于微芯片铝键垫上氟化铝的失效分析。众所周知,如果在晶圆厂中使用CF4和CHF3等含氟化学气体进行Al键垫打开工艺,则很难或不可能从Al键垫中完全去除氟(F)。然而,有可能将F污染减少和控制在背景/基线水平内,这不会影响装配厂的粘合过程
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of Binding Energy of Al Hexafluoride [AlF6]3- in X-Ray Photoelectron Spectroscopy
X-ray photoelectron spectroscopy/electron spectroscopy for chemical analysis (XPS/ESCA) is being widely used in failure analysis of semiconductor industries and wafer fabrication, as it is able to provide not only elemental information, but also chemical binding information. For example, using its fingerprint of C=O, we are able to identify possible root causes of carbon contamination in wafer fabrication (fab). In wafer fab, it is also being successfully used in failure analysis for Al fluorides on microchip Al bondpads. It is well known fact that it is difficult or impossible for us to fully free fluorine (F) from Al bondpads if F-based chemical gases such as CF4 and CHF3 are used for Al bondpad opening process in wafer fab. However, it is possible to reduce and control the F contamination to within the background/baseline level, which will not affect the bonding process at assembly houses
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