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Future of Nano-CMOS Technology and Its Production 纳米cmos技术及其生产的未来
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.250988
H. Iwai
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引用次数: 6
Backside Fault Isolation Technique in 0.13μm and 90nm Product Prototyping 0.13μm和90nm产品原型中的背面故障隔离技术
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-01 DOI: 10.1109/IPFA.2006.251012
Wan Qinfang, Mai Zhihong, Tan Pik Kee, J. Lam, G. Woods, Breeanna Cain, D. Brown, L. Ross
{"title":"Backside Fault Isolation Technique in 0.13μm and 90nm Product Prototyping","authors":"Wan Qinfang, Mai Zhihong, Tan Pik Kee, J. Lam, G. Woods, Breeanna Cain, D. Brown, L. Ross","doi":"10.1109/IPFA.2006.251012","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251012","url":null,"abstract":"As IC manufacturing processes move to smaller feature sizes, fault isolation technique and debug become more and more challenging. In this paper, die level backside fault isolation case studies using emission microscope and scanning laser microscope are presented. They efficiently identified the fault sites in 0.13mum and 90nm products","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131735846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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