0.13μm和90nm产品原型中的背面故障隔离技术

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-01 DOI:10.1109/IPFA.2006.251012

Wan Qinfang, Mai Zhihong, Tan Pik Kee, J. Lam, G. Woods, Breeanna Cain, D. Brown, L. Ross

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引用次数: 1

摘要

随着集成电路制造工艺向小特征尺寸方向发展，故障隔离技术和调试变得越来越具有挑战性。本文介绍了利用发射显微镜和扫描激光显微镜对模具级背面故障进行隔离的实例研究。他们有效地识别了0.13 nm和90nm产品中的故障位点

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Backside Fault Isolation Technique in 0.13μm and 90nm Product Prototyping

As IC manufacturing processes move to smaller feature sizes, fault isolation technique and debug become more and more challenging. In this paper, die level backside fault isolation case studies using emission microscope and scanning laser microscope are presented. They efficiently identified the fault sites in 0.13mum and 90nm products

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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