发布求助
文献互助 智能选刊 最新文献

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献

筛选
英文 中文
Interface Characterization for Vertically Aligned Carbon Nanofibers for On-chip Interconnect Applications 片上互连应用中垂直排列碳纳米纤维的界面表征
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251048
Y. Ominami, Q. Ngo, M. Suzuki, K. Mcilwrath, K. Jarausch, A. Cassell, Jun Li, C. Yang
{"title":"Interface Characterization for Vertically Aligned Carbon Nanofibers for On-chip Interconnect Applications","authors":"Y. Ominami, Q. Ngo, M. Suzuki, K. Mcilwrath, K. Jarausch, A. Cassell, Jun Li, C. Yang","doi":"10.1109/IPFA.2006.251048","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251048","url":null,"abstract":"Nanostructure characterization of carbon nanofibers (CNFs) for on-chip interconnect applications is presented. We propose a novel technique for characterizing interfacial nanostructures of vertically aligned CNFs, optimally suited for cross-sectional imaging with scanning transmission electron microscopy (STEM). Using this technique, vertically aligned CNFs are selectively grown by plasma-enhanced chemical vapor deposition (PECVD), on a substrate comprising a narrow strip (width ~100nm) formed by focused ion beam (FIB). Using high-resolution STEM, we show that CNFs with diameters ranging from 10-100 nm exhibit very similar graphitic layer morphologies at the base contact interface","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122688495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study of Asymmetrical Behaviour in Advanced Nano SRAM Devices 先进纳米SRAM器件的不对称行为研究
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.250998
H. Lin, Wen-Tung Chang, Chun-lin Chen, Tsui-hua Huang, Vivian Chiang, Chun-Ming Chen
{"title":"A Study of Asymmetrical Behaviour in Advanced Nano SRAM Devices","authors":"H. Lin, Wen-Tung Chang, Chun-lin Chen, Tsui-hua Huang, Vivian Chiang, Chun-Ming Chen","doi":"10.1109/IPFA.2006.250998","DOIUrl":"https://doi.org/10.1109/IPFA.2006.250998","url":null,"abstract":"The importance of understanding asymmetrical behaviour in SRAM has increased as the technology node shrinks below 100 nm. Single bit failure can possibly be caused by the malfunction of any of the six transistors in a standard SRAM cell. In order to understand the asymmetrical behaviour in advanced nano SRAM devices, nanoprobing is introduced to perform transistor level fault isolation prior to attempting physical failure analysis (PFA)","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"386 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122991635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Reliability Failures in Small Optocoupling and DC/DC Converter Devices 小型光耦合和DC/DC变换器器件的可靠性失效
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251022
P. Jacob, G. Nicoletti, M. Rutsch
{"title":"Reliability Failures in Small Optocoupling and DC/DC Converter Devices","authors":"P. Jacob, G. Nicoletti, M. Rutsch","doi":"10.1109/IPFA.2006.251022","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251022","url":null,"abstract":"In power electronics, often control and power part are at different electric potentials. Thus, electrically isolated coupling of them is performed by optocoupling devices. Also, isolating DC/DC converters are in use. While such systems are dedicated for high reliability application, weak points within these small components generate problems to the system reliability. The paper outlines most common weakness, as optocoupling internal LEDs, packaging problems and hybrid components in use at their electrical limits","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117254036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Reliability Improvement in Multi-level Cu/SiOC Low k Integration 多级Cu/SiOC低k集成的可靠性改进
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251009
Y.W. Chen, J. Zou, G. Zhang, S. Chen, Jianping Wang, T. Hu, E. Bei, J. Wang, A. Fan, I. Chen
{"title":"Reliability Improvement in Multi-level Cu/SiOC Low k Integration","authors":"Y.W. Chen, J. Zou, G. Zhang, S. Chen, Jianping Wang, T. Hu, E. Bei, J. Wang, A. Fan, I. Chen","doi":"10.1109/IPFA.2006.251009","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251009","url":null,"abstract":"In this paper, inter layer dielectric characteristic ramped voltage breakdown (VBD) performance of multiplayer Cu/SiOC interconnect was studied. The results showed that the breakdown reliability is highly process-related. Some dominating factors, such as via etching process, integration scheme used and Cu/dielectric interface etc., were discussed and proposed to improve breakdown reliability performance","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116391741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide 块氧化平面mosfet的超短沟道特性
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251017
Jyi-Tsong Lin, Y. Eng, Kuo-Dong Huang, Tai-Yi Lee, Kao-Cheng Lin
{"title":"Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide","authors":"Jyi-Tsong Lin, Y. Eng, Kuo-Dong Huang, Tai-Yi Lee, Kao-Cheng Lin","doi":"10.1109/IPFA.2006.251017","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251017","url":null,"abstract":"In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxide field-effect transistor (bSPIFET)","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"154 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131361624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress 基于机械应力的三维瞬态互连分析
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251019
S. Holzer, C. Hollauer, H. Ceric, Markus Karner, Tibor Grasser, E. Langer, Siegfried Selberherr
{"title":"Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress","authors":"S. Holzer, C. Hollauer, H. Ceric, Markus Karner, Tibor Grasser, E. Langer, Siegfried Selberherr","doi":"10.1109/IPFA.2006.251019","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251019","url":null,"abstract":"We presented a transient electro-thermal analysis with STAP considering self-heating. Thermo-mechanical simulators, e.g. FEDOS, are coupled to provide appropriated input data for electromigration analysis to obtain predictive results. The presented electro-thermal results depict the high temperature gradients close to heat sources and heat sinks. Further regions of high risk of electromigration are presented as results of thermo-mechanical simulations. The vias as well as edges and corners of interconnects in general are highly stressed regions due to the mismatch of thermal volume expansion coefficients and due to weak material adhesion of material interfaces","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116326659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on Strained-Si 应变si上超薄二氧化锆(ZrO2)薄膜的可靠性
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.251049
M. Bera, C. Maiti
{"title":"Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on Strained-Si","authors":"M. Bera, C. Maiti","doi":"10.1109/IPFA.2006.251049","DOIUrl":"https://doi.org/10.1109/IPFA.2006.251049","url":null,"abstract":"This paper report on the reliability properties of microwave-plasma deposited ultrathin high-k gate dielectric (ZrO2 ) films on strained-Si/SiGe layers. Stress induced leakage current; trap centroid and charge trapping behavior under constant current and voltage stressing in both polarities have been studied","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122978212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of Atomic Force Probing on 90nm DRAM Cell Failure Analysis 原子力探测在90nm DRAM电池失效分析中的应用
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.250983
Yu-Ching Yeh, Chia-Lung Lin, Bi-Jen Chen, Y. Tseng, J. D. Russell
{"title":"Application of Atomic Force Probing on 90nm DRAM Cell Failure Analysis","authors":"Yu-Ching Yeh, Chia-Lung Lin, Bi-Jen Chen, Y. Tseng, J. D. Russell","doi":"10.1109/IPFA.2006.250983","DOIUrl":"https://doi.org/10.1109/IPFA.2006.250983","url":null,"abstract":"This article presents a novel method to identify marginal faults in DRAM product via atomic force probing. Failing cells which are difficult to be identified by traditional methods were easily localized by current imaging. In addition, current-voltage curves were useful for judging failure root causes","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121959610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Distinction of Photo-Electric and Thermal Effects in a MOSFET by 1064 nm Laser Stimulation 1064nm激光刺激下MOSFET光电效应和热效应的区别
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.250982
S. Kumar Brahma, J. Heinig, A. Glowacki, R. Leihkauf, C. Boit
{"title":"Distinction of Photo-Electric and Thermal Effects in a MOSFET by 1064 nm Laser Stimulation","authors":"S. Kumar Brahma, J. Heinig, A. Glowacki, R. Leihkauf, C. Boit","doi":"10.1109/IPFA.2006.250982","DOIUrl":"https://doi.org/10.1109/IPFA.2006.250982","url":null,"abstract":"Thermal (TLS) and photoelectric (PLS) laser stimulation techniques are now widely used in failure analysis of integrated circuits. The stimulation signatures when using a 1064 nm laser are often a combination of PLS and TLS. This work presents a quantitative investigation of 1064 nm laser stimulation effects on single NMOSFET devices that isolates the two contributors. The results support the basic understanding of the static and dynamic device behavior when stimulated by 1064nm laser","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123412029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
DC-Coupled Laser Induced Detection System for Fault Localization in Microelectronic Failure Analysis 微电子故障分析中故障定位的直流耦合激光感应检测系统
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI: 10.1109/IPFA.2006.250981
A. Quah, L. S. Koh, C. Chua, M. Palaniappan, J. Chin, J. Phang
{"title":"DC-Coupled Laser Induced Detection System for Fault Localization in Microelectronic Failure Analysis","authors":"A. Quah, L. S. Koh, C. Chua, M. Palaniappan, J. Chin, J. Phang","doi":"10.1109/IPFA.2006.250981","DOIUrl":"https://doi.org/10.1109/IPFA.2006.250981","url":null,"abstract":"This paper describes a new dc-coupled laser induced detection system for fault localization in microelectronic failure analysis. This method removes artifacts inherent in ac-coupled detection systems and is capable of producing an accurate mapping of the laser induced resistance change of the devices without signal attenuation. This method is also capable of localizing large area faults without signal distortion","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124380839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信