多级Cu/SiOC低k集成的可靠性改进

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251009

Y.W. Chen, J. Zou, G. Zhang, S. Chen, Jianping Wang, T. Hu, E. Bei, J. Wang, A. Fan, I. Chen

{"title":"多级Cu/SiOC低k集成的可靠性改进","authors":"Y.W. Chen, J. Zou, G. Zhang, S. Chen, Jianping Wang, T. Hu, E. Bei, J. Wang, A. Fan, I. Chen","doi":"10.1109/IPFA.2006.251009","DOIUrl":null,"url":null,"abstract":"In this paper, inter layer dielectric characteristic ramped voltage breakdown (VBD) performance of multiplayer Cu/SiOC interconnect was studied. The results showed that the breakdown reliability is highly process-related. Some dominating factors, such as via etching process, integration scheme used and Cu/dielectric interface etc., were discussed and proposed to improve breakdown reliability performance","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"188 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability Improvement in Multi-level Cu/SiOC Low k Integration\",\"authors\":\"Y.W. Chen, J. Zou, G. Zhang, S. Chen, Jianping Wang, T. Hu, E. Bei, J. Wang, A. Fan, I. Chen\",\"doi\":\"10.1109/IPFA.2006.251009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, inter layer dielectric characteristic ramped voltage breakdown (VBD) performance of multiplayer Cu/SiOC interconnect was studied. The results showed that the breakdown reliability is highly process-related. Some dominating factors, such as via etching process, integration scheme used and Cu/dielectric interface etc., were discussed and proposed to improve breakdown reliability performance\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"188 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.251009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了多层Cu/SiOC互连层间介电特性斜坡电压击穿(VBD)性能。结果表明，故障可靠性与工艺高度相关。从蚀刻工艺、集成方案、Cu/介电界面等方面讨论了提高击穿可靠性的主要因素

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reliability Improvement in Multi-level Cu/SiOC Low k Integration

In this paper, inter layer dielectric characteristic ramped voltage breakdown (VBD) performance of multiplayer Cu/SiOC interconnect was studied. The results showed that the breakdown reliability is highly process-related. Some dominating factors, such as via etching process, integration scheme used and Cu/dielectric interface etc., were discussed and proposed to improve breakdown reliability performance

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

自引率

0.00%

发文量