1064nm激光刺激下MOSFET光电效应和热效应的区别

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.250982

S. Kumar Brahma, J. Heinig, A. Glowacki, R. Leihkauf, C. Boit

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引用次数: 9

摘要

热(TLS)和光电(PLS)激光刺激技术目前广泛应用于集成电路的失效分析。当使用1064nm激光时，刺激信号通常是PLS和TLS的组合。这项工作提出了一个定量研究1064nm激光刺激对单个NMOSFET器件的影响，隔离两个贡献者。研究结果支持了对1064nm激光刺激下器件静态和动态特性的基本理解

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Distinction of Photo-Electric and Thermal Effects in a MOSFET by 1064 nm Laser Stimulation

Thermal (TLS) and photoelectric (PLS) laser stimulation techniques are now widely used in failure analysis of integrated circuits. The stimulation signatures when using a 1064 nm laser are often a combination of PLS and TLS. This work presents a quantitative investigation of 1064 nm laser stimulation effects on single NMOSFET devices that isolates the two contributors. The results support the basic understanding of the static and dynamic device behavior when stimulated by 1064nm laser

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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