Application of Atomic Force Probing on 90nm DRAM Cell Failure Analysis

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.250983

Yu-Ching Yeh, Chia-Lung Lin, Bi-Jen Chen, Y. Tseng, J. D. Russell

引用次数: 6

Abstract

This article presents a novel method to identify marginal faults in DRAM product via atomic force probing. Failing cells which are difficult to be identified by traditional methods were easily localized by current imaging. In addition, current-voltage curves were useful for judging failure root causes

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原子力探测在90nm DRAM电池失效分析中的应用

提出了一种利用原子力探测技术识别DRAM产品边缘故障的新方法。传统方法难以识别的衰竭细胞，通过当前的成像技术可以很容易地定位。此外，电流-电压曲线对判断故障的根本原因也很有用

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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