Reliability Improvement in Multi-level Cu/SiOC Low k Integration

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251009

Y.W. Chen, J. Zou, G. Zhang, S. Chen, Jianping Wang, T. Hu, E. Bei, J. Wang, A. Fan, I. Chen

引用次数: 1

Abstract

In this paper, inter layer dielectric characteristic ramped voltage breakdown (VBD) performance of multiplayer Cu/SiOC interconnect was studied. The results showed that the breakdown reliability is highly process-related. Some dominating factors, such as via etching process, integration scheme used and Cu/dielectric interface etc., were discussed and proposed to improve breakdown reliability performance

查看原文本刊更多论文

多级Cu/SiOC低k集成的可靠性改进

本文研究了多层Cu/SiOC互连层间介电特性斜坡电压击穿(VBD)性能。结果表明，故障可靠性与工艺高度相关。从蚀刻工艺、集成方案、Cu/介电界面等方面讨论了提高击穿可靠性的主要因素

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

自引率

0.00%

发文量