纳米cmos技术及其生产的未来

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.250988

H. Iwai

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引用次数: 6

摘要

本文重点讨论了未来半导体制造面临的挑战。我们将分别在第2节和第3节讨论关于可能的缩放限制和在100纳米以下器件中出现的问题的一些背景信息。未来半导体制造的影响将在第4节讨论。我们也将期待制造业中心在地理上的重新分配，以及目前在集成电路技术方面的领导者发挥新的作用。后裁员时代的范式将在第5节中描述

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Future of Nano-CMOS Technology and Its Production

This paper focuses on the future semiconductor manufacturing challenges. Some background information regarding the possible limits of scaling and the problems appeared in the sub-100 nm devices will be discussed, respectively, in section 2 and 3. The impacts of the future semiconductor manufacturing will be discussed in section 4. We shall also look forward to the possible geographical redistribution of the manufacturing centers and the new role playing of the present leaders in IC technology. Paradigm of post-downsizing era will be described in section 5

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来源期刊

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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