The New Concept for Particle Remove in Wet Bench Cleaning

S. Chen, Shengdi Chen, Long-Yeu Chung, W. Yeh
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引用次数: 5

Abstract

For the manufacturing of submicron or deep submicron ULSIs, it is important to completely suppress particles and contamination created on the silicon wafer surface. The tradition concept for cleaning need was used chemical content (APM, ammonia and hydrogen peroxide mixtures) to play a major role. Unfortunately, the SC-1 (APM) had negative effect on surface damage. In recent years, it has been modified to incorporate a more dilute solution in order to reduce surface micro-roughness caused by ammonium hydroxide. In this paper, a new thinking was proposed to use DI water quick dump rinse (QDR) mode change from conversation set-up to an improvement mode. A modified recipe with modified using DIW can totally remove the particle during process
湿式工作台清洗中颗粒去除的新概念
对于亚微米或深亚微米ulsi的制造,重要的是要完全抑制在硅片表面产生的颗粒和污染。传统的清洗需求概念是使用化学含量(APM、氨和过氧化氢混合物)来发挥主要作用。不幸的是,SC-1 (APM)对表面损伤有负面影响。近年来,为了减少由氢氧化铵引起的表面微粗糙度,它已被修改为加入更稀的溶液。本文提出了利用去离子水快速倾倒冲洗(QDR)模式由会话设置模式转变为改进模式的新思路。用DIW改性后的配方可以完全去除过程中的颗粒
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