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1997 GaAs Reliability Workshop. Proceedings最新文献

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DC and RF lifetests on a GaAs MMIC chip set GaAs MMIC芯片组的直流和射频寿命测试
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656119
H. Paine, M. Delaney
{"title":"DC and RF lifetests on a GaAs MMIC chip set","authors":"H. Paine, M. Delaney","doi":"10.1109/GAASRW.1997.656119","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656119","url":null,"abstract":"We have conducted a program of lifetesting on a series of MESFET MMICs. The circuits were small-signal MMICs, designed by Hughes. They were fabricated by a single commercial foundry: Raytheon TI Systems Inc. The technology involves ion-implanted GaAs, with e-beam gates of 0.50 and 0.25 /spl mu/m length. The 0.25 /spl mu/m devices also have an implanted p-type layer for better noise figure.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114467744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar transistors 掺杂碳异质结构双极晶体管初始电流增益增加机理
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.657046
J. Chi, K. Lu
{"title":"Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar transistors","authors":"J. Chi, K. Lu","doi":"10.1109/GAASRW.1997.657046","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.657046","url":null,"abstract":"This talk reports a new finding that after the initial rise, the current gain of carbon-doped AlGaAs/GaAs HBTs can be re-initiated by a 200-300/spl deg/C annealing under no bias. The re-initiating is nondestructive and reproducible, therefore permitting unambiguous study of the phenomenon. A simple physical model was described to explains all the experimental results obtained on the re-initiation phenomenon.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126496125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
GaAs company Q&R benchmarking results GaAs公司Q&R基准测试结果
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656146
W. Roesch
{"title":"GaAs company Q&R benchmarking results","authors":"W. Roesch","doi":"10.1109/GAASRW.1997.656146","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656146","url":null,"abstract":"As a result of curiosity from the GaAs Reliability and Quality JEDEC Committee, a benchmarking exercise was chartered. Several companies have provided input to the benchmarking effort. This publication is intended to publicize the investigation and provide general results to the GaAs Community. The intent of this work is to provide baseline information on quality and reliability operations at gallium arsenide manufacturers. This information not only helps each manufacturer understand the other better, but allows for comparisons and development of \"common ground\" and opportunities for standardization.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122642965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices 封闭腔内氢气的放气及其对砷化镓器件可靠性的影响
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656134
A. Reisinger, S. Adams, A. Immorlica
{"title":"Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices","authors":"A. Reisinger, S. Adams, A. Immorlica","doi":"10.1109/GAASRW.1997.656134","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656134","url":null,"abstract":"The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-temperature manufacturing process is slowly released inside the housing. This paper discusses the results of a theoretical analysis of the dynamics of the mechanism involved.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133735543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Hydrogen effects on GaAs microwave semiconductors GaAs微波半导体中的氢效应
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656128
D. Ragle, S. Kayali
{"title":"Hydrogen effects on GaAs microwave semiconductors","authors":"D. Ragle, S. Kayali","doi":"10.1109/GAASRW.1997.656128","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656128","url":null,"abstract":"This presentation will describe and summarize a report which documents all published hydrogen effects work performed through 1997. The report is based on a literature search for hydrogen effects on GaAs devices and interviews with several persons noted for their work on this problem, and is a compilation of hydrogen effects data and references in a single document. Included in the presentation will be an outline of the problem history, a summary and comparison of failure effects observed on devices (MESFET, PHEMT, and InP HEMT), a review of hydrogen sources in hermetic packages, proposed solutions to the problem and recommendations for use of these devices in space and other high reliability applications.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115431173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Analysis of surface and substrate deep-trap effects on gate-lag phenomena in GaAs MESFETs GaAs mesfet中表面和衬底深阱效应对栅极滞后现象的影响分析
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656142
K. Horio, T. Yamada, A. Wakabayashi
{"title":"Analysis of surface and substrate deep-trap effects on gate-lag phenomena in GaAs MESFETs","authors":"K. Horio, T. Yamada, A. Wakabayashi","doi":"10.1109/GAASRW.1997.656142","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656142","url":null,"abstract":"The gate-lag in GaAs MESFETs is a phenomenon that the drain current shows slow transient when the gate voltage is changed abruptly. This is a serious problem in both digital and analog GaAs ICs, but its mechanism is not well clarified. The surface states are thought to be main causes of this phenomenon, and device structures which can reduce surface-state effects, such as a self-aligned structure and a recessed-gate structure, are adopted. But the gate-lag sometimes arises even in these structures. So, in this work, we have studied the gate-lag phenomena in these device structures by two-dimensional numerical simulation, and found that the gate-lag may not be completely suppressed in the recessed-gate structure. In addition, we have simulated the substrate deep-trap effects, and found that abnormal transient can arise when the off-state gate voltage is deeply negative.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124317319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Accelerated lifetime testing and failure analysis of quartz based GaAs planar Schottky diodes 石英基GaAs平面肖特基二极管加速寿命测试及失效分析
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656117
R. Lin, I. Mehdi, A. Pease, R. Dengler, D. Humphrey, T. Lee, A. Scherer, S. Kayali
{"title":"Accelerated lifetime testing and failure analysis of quartz based GaAs planar Schottky diodes","authors":"R. Lin, I. Mehdi, A. Pease, R. Dengler, D. Humphrey, T. Lee, A. Scherer, S. Kayali","doi":"10.1109/GAASRW.1997.656117","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656117","url":null,"abstract":"Accelerated lifetime tests have been performed on integrated planar GaAs Schottky diodes that were bonded to quartz substrates upside-down with a heat-cured epoxy. Results at 175/spl deg/C, 200/spl deg/C, and 240/spl deg/C were analyzed using the Arrhenius-lognormal model. These tests predict a room temperature MTTF of 3/spl times/10/sup 8/ hours, a value that is comparable to conventional high-frequency planar Schottky diodes. This result demonstrates that the use of an appropriate epoxy to obtain GaAs devices on quartz substrates does not significantly reduce the lifetime of the devices.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"83 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133719720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications 毫米波应用中InAlAs/InGaAs/lnP hemt技术的性能和可靠性
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656127
Y. Chou, D. Leung, R. Lai, Y.C. Chen, G. Li, M. Barsky, C. Wu, P. Liu, J. Scarpulla, D. Streit
{"title":"Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications","authors":"Y. Chou, D. Leung, R. Lai, Y.C. Chen, G. Li, M. Barsky, C. Wu, P. Liu, J. Scarpulla, D. Streit","doi":"10.1109/GAASRW.1997.656127","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656127","url":null,"abstract":"Recently, InAlAs/InGaAs/InP HEMTs have demonstrated the superior noise and power performance at millimeter wave (MMW) frequencies. While reliability data of 0.1 /spl mu/m low noise InP discrete HEMTs has been reported on devices stressed by DC conditions at elevated temperature, there have been few reports on reliability data of InP HEMT MMIC LNAs and InP HEMTs designed for power applications. To achieve a robust InP HEMT technology for reliable MMW applications such as transceivers, it is essential to examine reliability of both low noise and power InP HEMTs in detail. The reliability investigation in this paper performed on various devices and MMIC parts include high temperature lifetesting and high reverse gate bias stress at room temperature. This initial reliability results shown here point towards a robust InP HEMT low noise and power technology.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129333845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A comprehensive gate-lag model for digitally modulated RF power amplifiers 数字调制射频功率放大器的综合门滞后模型
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656140
M. Shirokov, J. Bao, C. Wei, J.C.M. Hwang
{"title":"A comprehensive gate-lag model for digitally modulated RF power amplifiers","authors":"M. Shirokov, J. Bao, C. Wei, J.C.M. Hwang","doi":"10.1109/GAASRW.1997.656140","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656140","url":null,"abstract":"A time-domain/frequency-domain mixed-mode MESFET model has been developed to predict both transient and steady-state performances of digitally modulated RF power amplifiers. Steady-state performance was predicted by a conventional large-signal model in the frequency domain with the model parameters manually adjusted according to measured RF waveforms. Gate lag due to surface/substrate traps was predicted by a parasitic current source which characteristics were determined by an RC delay circuit and empirical equations in terms of on/off voltages/times and the drain supply voltage.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"1 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121007355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress 恒流应力下掺be的AlGaAs/GaAs HBTs的直流和射频降解研究
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656113
M. Borgarino, R. Menozzi, J. Tasselli, A. Marty, F. Fantini
{"title":"A study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress","authors":"M. Borgarino, R. Menozzi, J. Tasselli, A. Marty, F. Fantini","doi":"10.1109/GAASRW.1997.656113","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656113","url":null,"abstract":"AlGaAs/GaAs HBTs play an increasingly important role in the market of wireless products. Although it is still a matter of scientific debate whether Be or C is the optimum base dopant, the technology of Be-doping is more mature, and commercially more important than that of C-doping. However, it is well known that the outdiffusion of Be toward the emitter (a degradation mechanism that is accelerated by high current densities) produces a displacement of the p-n base-emitter junction which results in an increase of its turn-on voltage (V/sub BEon/) and a reduction of the current gain /spl beta/. Less treated are the effects of Be diffusion on the device RF characteristics, and their correlation with the DC degradation mode. Moreover, the stress time and current dependences of the degradation are not conclusively documented.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115013762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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