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1997 GaAs Reliability Workshop. Proceedings最新文献

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Bias stress tests of extremely high doped base HBTs 极高掺杂碱HBTs的偏置应力测试
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656116
T. Henderson, D. Hill
{"title":"Bias stress tests of extremely high doped base HBTs","authors":"T. Henderson, D. Hill","doi":"10.1109/GAASRW.1997.656116","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656116","url":null,"abstract":"Recently, there has been a great deal of interest in HBTs for ultra-high performance applications, such as low-noise oscillators at 77 GHz and power amplifiers at K-band and above. We have also demonstrated a 1 W amplifier with 65% PAE at 20 GHz. Such performance is extremely appealing for a number of applications, including satellite communications. However, to obtain the performance needed at these frequencies, device design must be extremely aggressive. This includes the use of heavily doped base layers to reduce base resistance. The purpose of this work is to describe what is to our knowledge the first set of bias-stress tests performed on ultra-high doped base HBTs (C/spl ges/10/sup 20/ cm/sup -3/).","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126249971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of statistical distributions for the analysis of GaAs MMIC life test data GaAs MMIC寿命试验数据分析的统计分布比较
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656122
J. Mittereder, J.R. Roussos, M.T. Karanikolas, W. Anderson
{"title":"Comparison of statistical distributions for the analysis of GaAs MMIC life test data","authors":"J. Mittereder, J.R. Roussos, M.T. Karanikolas, W. Anderson","doi":"10.1109/GAASRW.1997.656122","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656122","url":null,"abstract":"Four statistical distributions were fit to life test data of gallium arsenide monolithic microwave integrated circuits devices to predict the median time to failure (t/sub 50/ lifetime) of each device type at the life test temperatures. These lifetimes were fit to an Arrhenius equation to predict each device's activation energy and median time to failure at 140 degrees Celsius channel temperature. Results comparing the four distributions are presented and the activation energies are compared to those reported by industry. The median time to failure is useful for verifying device reliability, and the activation energy is useful for predicting the failure mechanism. This information assists chip manufacturers in improving device reliability, and in predicting the life time of the device in various applications. To our knowledge, this is the first report of a comparison of statistical distributions among several types of devices.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"251 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133482624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Non-destructive, high resolution channel temperature measurements of compound semiconductor devices 化合物半导体器件的非破坏性、高分辨率通道温度测量
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656144
Q. Kim, S. Kayali
{"title":"Non-destructive, high resolution channel temperature measurements of compound semiconductor devices","authors":"Q. Kim, S. Kayali","doi":"10.1109/GAASRW.1997.656144","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656144","url":null,"abstract":"A technique based on infrared-emission spectroscopy has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field-effect transistor (MESFET). Temperature measurements are important for the development of high-power GaAs MESFET and other advanced semiconductor devices because hot spots can affect operation and reduce operational lifetimes. Passive infrared-sensing techniques provide temperature measurements with a spatial resolution of 15 /spl mu/m, which is much too coarse for determining local distributions of temperature in state-of-the-art devices with submicron-sized gate structures. The present technique affords a spatial resolution of about 0.5 /spl mu/m.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126027783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of hydrogen effects in GaAs FETs GaAs fet中氢效应的建模
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656133
R. Mutha, D. Rancour, S. Kayali, W. Anderson
{"title":"Modeling of hydrogen effects in GaAs FETs","authors":"R. Mutha, D. Rancour, S. Kayali, W. Anderson","doi":"10.1109/GAASRW.1997.656133","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656133","url":null,"abstract":"Hydrogen contamination of GaAs devices has been a major concern for quite some time. In this paper we model the effects of Hydrogen on GaAs FETs. We use a numerical approach to solve the diffusion equations of Hydrogen into the device. The resulting Silicon doping profiles obtained by these calculations are used as input data for a Monte Carlo device simulation code. From the Silicon profiles it is concluded that silicon passivation is greater at lower temperatures. Hydrogen saturation occurs at higher temperatures.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116693822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High reliability GaAs MESFET for suppressed hot-electron-induced degradation of high efficiency power amplifiers 用于抑制高效功率放大器热电子诱导退化的高可靠性GaAs MESFET
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI: 10.1109/GAASRW.1997.656143
Y. Tkachenko, C. Wei, D. Bartle
{"title":"High reliability GaAs MESFET for suppressed hot-electron-induced degradation of high efficiency power amplifiers","authors":"Y. Tkachenko, C. Wei, D. Bartle","doi":"10.1109/GAASRW.1997.656143","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656143","url":null,"abstract":"As a result of channel recess engineering, GaAs MESFET breakdown voltage was improved with minimal sacrifice of device RF performance. The dc breakdown voltages defined at gate current of 1 mA/mm as high as 21.5 V were achieved for the MESFETs with increased channel recess width. A consistent increase in breakdown voltage was observed at RF by using the waveform probing technique. The new MESFET offers suppression of hot-electron effects for improved reliability of high-efficiency power amplifiers with an estimated order of magnitude increase in device lifetime.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"368 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121734197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
S93031 phase modulator MMIC DC lifetest S93031相位调制器MMIC直流寿命试验
1997 GaAs Reliability Workshop. Proceedings Pub Date : 1900-01-01 DOI: 10.1109/GAASRW.1997.656121
J. Morrow, R.W. Shaw, S. Kayali
{"title":"S93031 phase modulator MMIC DC lifetest","authors":"J. Morrow, R.W. Shaw, S. Kayali","doi":"10.1109/GAASRW.1997.656121","DOIUrl":"https://doi.org/10.1109/GAASRW.1997.656121","url":null,"abstract":"A 1000-hour DC lifetest was performed on ten S93031 MMIC phase modulators at a temperature of 125/spl deg/C. The criterion for failure was a 50% change in supply current. None of the ten devices tested failed the DC test. The RF performance of the devices was measured before and after the test, and showed little or no change in device performance.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125773143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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