{"title":"GaAs fet中氢效应的建模","authors":"R. Mutha, D. Rancour, S. Kayali, W. Anderson","doi":"10.1109/GAASRW.1997.656133","DOIUrl":null,"url":null,"abstract":"Hydrogen contamination of GaAs devices has been a major concern for quite some time. In this paper we model the effects of Hydrogen on GaAs FETs. We use a numerical approach to solve the diffusion equations of Hydrogen into the device. The resulting Silicon doping profiles obtained by these calculations are used as input data for a Monte Carlo device simulation code. From the Silicon profiles it is concluded that silicon passivation is greater at lower temperatures. Hydrogen saturation occurs at higher temperatures.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Modeling of hydrogen effects in GaAs FETs\",\"authors\":\"R. Mutha, D. Rancour, S. Kayali, W. Anderson\",\"doi\":\"10.1109/GAASRW.1997.656133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hydrogen contamination of GaAs devices has been a major concern for quite some time. In this paper we model the effects of Hydrogen on GaAs FETs. We use a numerical approach to solve the diffusion equations of Hydrogen into the device. The resulting Silicon doping profiles obtained by these calculations are used as input data for a Monte Carlo device simulation code. From the Silicon profiles it is concluded that silicon passivation is greater at lower temperatures. Hydrogen saturation occurs at higher temperatures.\",\"PeriodicalId\":271248,\"journal\":{\"name\":\"1997 GaAs Reliability Workshop. Proceedings\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 GaAs Reliability Workshop. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.1997.656133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 GaAs Reliability Workshop. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.1997.656133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hydrogen contamination of GaAs devices has been a major concern for quite some time. In this paper we model the effects of Hydrogen on GaAs FETs. We use a numerical approach to solve the diffusion equations of Hydrogen into the device. The resulting Silicon doping profiles obtained by these calculations are used as input data for a Monte Carlo device simulation code. From the Silicon profiles it is concluded that silicon passivation is greater at lower temperatures. Hydrogen saturation occurs at higher temperatures.
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