Modeling of hydrogen effects in GaAs FETs

Abstract

Hydrogen contamination of GaAs devices has been a major concern for quite some time. In this paper we model the effects of Hydrogen on GaAs FETs. We use a numerical approach to solve the diffusion equations of Hydrogen into the device. The resulting Silicon doping profiles obtained by these calculations are used as input data for a Monte Carlo device simulation code. From the Silicon profiles it is concluded that silicon passivation is greater at lower temperatures. Hydrogen saturation occurs at higher temperatures.