毫米波应用中InAlAs/InGaAs/lnP hemt技术的性能和可靠性

Y. Chou, D. Leung, R. Lai, Y.C. Chen, G. Li, M. Barsky, C. Wu, P. Liu, J. Scarpulla, D. Streit
{"title":"毫米波应用中InAlAs/InGaAs/lnP hemt技术的性能和可靠性","authors":"Y. Chou, D. Leung, R. Lai, Y.C. Chen, G. Li, M. Barsky, C. Wu, P. Liu, J. Scarpulla, D. Streit","doi":"10.1109/GAASRW.1997.656127","DOIUrl":null,"url":null,"abstract":"Recently, InAlAs/InGaAs/InP HEMTs have demonstrated the superior noise and power performance at millimeter wave (MMW) frequencies. While reliability data of 0.1 /spl mu/m low noise InP discrete HEMTs has been reported on devices stressed by DC conditions at elevated temperature, there have been few reports on reliability data of InP HEMT MMIC LNAs and InP HEMTs designed for power applications. To achieve a robust InP HEMT technology for reliable MMW applications such as transceivers, it is essential to examine reliability of both low noise and power InP HEMTs in detail. The reliability investigation in this paper performed on various devices and MMIC parts include high temperature lifetesting and high reverse gate bias stress at room temperature. This initial reliability results shown here point towards a robust InP HEMT low noise and power technology.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications\",\"authors\":\"Y. Chou, D. Leung, R. Lai, Y.C. Chen, G. Li, M. Barsky, C. Wu, P. Liu, J. Scarpulla, D. Streit\",\"doi\":\"10.1109/GAASRW.1997.656127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, InAlAs/InGaAs/InP HEMTs have demonstrated the superior noise and power performance at millimeter wave (MMW) frequencies. While reliability data of 0.1 /spl mu/m low noise InP discrete HEMTs has been reported on devices stressed by DC conditions at elevated temperature, there have been few reports on reliability data of InP HEMT MMIC LNAs and InP HEMTs designed for power applications. To achieve a robust InP HEMT technology for reliable MMW applications such as transceivers, it is essential to examine reliability of both low noise and power InP HEMTs in detail. The reliability investigation in this paper performed on various devices and MMIC parts include high temperature lifetesting and high reverse gate bias stress at room temperature. This initial reliability results shown here point towards a robust InP HEMT low noise and power technology.\",\"PeriodicalId\":271248,\"journal\":{\"name\":\"1997 GaAs Reliability Workshop. Proceedings\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 GaAs Reliability Workshop. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.1997.656127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 GaAs Reliability Workshop. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.1997.656127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

最近,InAlAs/InGaAs/InP hemt在毫米波(MMW)频率下展示了优越的噪声和功率性能。虽然在高温直流条件下,已有0.1 /spl mu/m低噪声InP分立HEMT的可靠性数据报道,但关于InP HEMT MMIC LNAs和电源应用的InP HEMT可靠性数据的报道很少。为了实现可靠的毫米波应用(如收发器)的强大的InP HEMT技术,有必要详细检查低噪声和功率InP HEMT的可靠性。本文对各种器件和MMIC部件进行了可靠性研究,包括高温寿命试验和室温下的高反栅偏置应力。这里显示的初步可靠性结果指向了稳健的InP HEMT低噪声和低功耗技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications
Recently, InAlAs/InGaAs/InP HEMTs have demonstrated the superior noise and power performance at millimeter wave (MMW) frequencies. While reliability data of 0.1 /spl mu/m low noise InP discrete HEMTs has been reported on devices stressed by DC conditions at elevated temperature, there have been few reports on reliability data of InP HEMT MMIC LNAs and InP HEMTs designed for power applications. To achieve a robust InP HEMT technology for reliable MMW applications such as transceivers, it is essential to examine reliability of both low noise and power InP HEMTs in detail. The reliability investigation in this paper performed on various devices and MMIC parts include high temperature lifetesting and high reverse gate bias stress at room temperature. This initial reliability results shown here point towards a robust InP HEMT low noise and power technology.
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