{"title":"数字调制射频功率放大器的综合门滞后模型","authors":"M. Shirokov, J. Bao, C. Wei, J.C.M. Hwang","doi":"10.1109/GAASRW.1997.656140","DOIUrl":null,"url":null,"abstract":"A time-domain/frequency-domain mixed-mode MESFET model has been developed to predict both transient and steady-state performances of digitally modulated RF power amplifiers. Steady-state performance was predicted by a conventional large-signal model in the frequency domain with the model parameters manually adjusted according to measured RF waveforms. Gate lag due to surface/substrate traps was predicted by a parasitic current source which characteristics were determined by an RC delay circuit and empirical equations in terms of on/off voltages/times and the drain supply voltage.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"1 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A comprehensive gate-lag model for digitally modulated RF power amplifiers\",\"authors\":\"M. Shirokov, J. Bao, C. Wei, J.C.M. Hwang\",\"doi\":\"10.1109/GAASRW.1997.656140\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A time-domain/frequency-domain mixed-mode MESFET model has been developed to predict both transient and steady-state performances of digitally modulated RF power amplifiers. Steady-state performance was predicted by a conventional large-signal model in the frequency domain with the model parameters manually adjusted according to measured RF waveforms. Gate lag due to surface/substrate traps was predicted by a parasitic current source which characteristics were determined by an RC delay circuit and empirical equations in terms of on/off voltages/times and the drain supply voltage.\",\"PeriodicalId\":271248,\"journal\":{\"name\":\"1997 GaAs Reliability Workshop. Proceedings\",\"volume\":\"1 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 GaAs Reliability Workshop. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.1997.656140\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 GaAs Reliability Workshop. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.1997.656140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comprehensive gate-lag model for digitally modulated RF power amplifiers
A time-domain/frequency-domain mixed-mode MESFET model has been developed to predict both transient and steady-state performances of digitally modulated RF power amplifiers. Steady-state performance was predicted by a conventional large-signal model in the frequency domain with the model parameters manually adjusted according to measured RF waveforms. Gate lag due to surface/substrate traps was predicted by a parasitic current source which characteristics were determined by an RC delay circuit and empirical equations in terms of on/off voltages/times and the drain supply voltage.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
