DC and RF lifetests on a GaAs MMIC chip set

Abstract

We have conducted a program of lifetesting on a series of MESFET MMICs. The circuits were small-signal MMICs, designed by Hughes. They were fabricated by a single commercial foundry: Raytheon TI Systems Inc. The technology involves ion-implanted GaAs, with e-beam gates of 0.50 and 0.25 /spl mu/m length. The 0.25 /spl mu/m devices also have an implanted p-type layer for better noise figure.