Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices

Abstract

The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-temperature manufacturing process is slowly released inside the housing. This paper discusses the results of a theoretical analysis of the dynamics of the mechanism involved.