{"title":"封闭腔内氢气的放气及其对砷化镓器件可靠性的影响","authors":"A. Reisinger, S. Adams, A. Immorlica","doi":"10.1109/GAASRW.1997.656134","DOIUrl":null,"url":null,"abstract":"The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-temperature manufacturing process is slowly released inside the housing. This paper discusses the results of a theoretical analysis of the dynamics of the mechanism involved.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices\",\"authors\":\"A. Reisinger, S. Adams, A. Immorlica\",\"doi\":\"10.1109/GAASRW.1997.656134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-temperature manufacturing process is slowly released inside the housing. This paper discusses the results of a theoretical analysis of the dynamics of the mechanism involved.\",\"PeriodicalId\":271248,\"journal\":{\"name\":\"1997 GaAs Reliability Workshop. Proceedings\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 GaAs Reliability Workshop. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.1997.656134\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 GaAs Reliability Workshop. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.1997.656134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Outgassing of hydrogen in an enclosed cavity and ramifications on the reliability of GaAs devices
The harmful effect of hydrogen on the reliability of GaAs semiconductor components such as P-HEMT devices is well documented. Hermetic cavities exacerbate this mode of device degradation because at least some of the hydrogen inevitably entrapped in the raw casing material during the original high-temperature manufacturing process is slowly released inside the housing. This paper discusses the results of a theoretical analysis of the dynamics of the mechanism involved.
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