Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar transistors

Abstract

This talk reports a new finding that after the initial rise, the current gain of carbon-doped AlGaAs/GaAs HBTs can be re-initiated by a 200-300/spl deg/C annealing under no bias. The re-initiating is nondestructive and reproducible, therefore permitting unambiguous study of the phenomenon. A simple physical model was described to explains all the experimental results obtained on the re-initiation phenomenon.