GaAs MMIC芯片组的直流和射频寿命测试

1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI:10.1109/GAASRW.1997.656119

H. Paine, M. Delaney

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引用次数: 0

摘要

我们对一系列MESFET mmic进行了寿命测试。这些电路是由休斯设计的小信号mmic。它们是由一家单一的商业铸造厂制造的:雷神TI系统公司。该技术涉及离子注入GaAs，电子束栅长度为0.50和0.25 /spl mu/m。0.25 /spl μ l /m器件还具有植入的p型层，以获得更好的噪声系数。

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DC and RF lifetests on a GaAs MMIC chip set

We have conducted a program of lifetesting on a series of MESFET MMICs. The circuits were small-signal MMICs, designed by Hughes. They were fabricated by a single commercial foundry: Raytheon TI Systems Inc. The technology involves ion-implanted GaAs, with e-beam gates of 0.50 and 0.25 /spl mu/m length. The 0.25 /spl mu/m devices also have an implanted p-type layer for better noise figure.

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1997 GaAs Reliability Workshop. Proceedings

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