{"title":"GaAs微波半导体中的氢效应","authors":"D. Ragle, S. Kayali","doi":"10.1109/GAASRW.1997.656128","DOIUrl":null,"url":null,"abstract":"This presentation will describe and summarize a report which documents all published hydrogen effects work performed through 1997. The report is based on a literature search for hydrogen effects on GaAs devices and interviews with several persons noted for their work on this problem, and is a compilation of hydrogen effects data and references in a single document. Included in the presentation will be an outline of the problem history, a summary and comparison of failure effects observed on devices (MESFET, PHEMT, and InP HEMT), a review of hydrogen sources in hermetic packages, proposed solutions to the problem and recommendations for use of these devices in space and other high reliability applications.","PeriodicalId":271248,"journal":{"name":"1997 GaAs Reliability Workshop. Proceedings","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Hydrogen effects on GaAs microwave semiconductors\",\"authors\":\"D. Ragle, S. Kayali\",\"doi\":\"10.1109/GAASRW.1997.656128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This presentation will describe and summarize a report which documents all published hydrogen effects work performed through 1997. The report is based on a literature search for hydrogen effects on GaAs devices and interviews with several persons noted for their work on this problem, and is a compilation of hydrogen effects data and references in a single document. Included in the presentation will be an outline of the problem history, a summary and comparison of failure effects observed on devices (MESFET, PHEMT, and InP HEMT), a review of hydrogen sources in hermetic packages, proposed solutions to the problem and recommendations for use of these devices in space and other high reliability applications.\",\"PeriodicalId\":271248,\"journal\":{\"name\":\"1997 GaAs Reliability Workshop. Proceedings\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 GaAs Reliability Workshop. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.1997.656128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 GaAs Reliability Workshop. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.1997.656128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This presentation will describe and summarize a report which documents all published hydrogen effects work performed through 1997. The report is based on a literature search for hydrogen effects on GaAs devices and interviews with several persons noted for their work on this problem, and is a compilation of hydrogen effects data and references in a single document. Included in the presentation will be an outline of the problem history, a summary and comparison of failure effects observed on devices (MESFET, PHEMT, and InP HEMT), a review of hydrogen sources in hermetic packages, proposed solutions to the problem and recommendations for use of these devices in space and other high reliability applications.
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