掺杂碳异质结构双极晶体管初始电流增益增加机理

1997 GaAs Reliability Workshop. Proceedings Pub Date : 1997-10-12 DOI:10.1109/GAASRW.1997.657046

J. Chi, K. Lu

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引用次数: 9

摘要

本次演讲报告了一个新的发现，即在初始上升之后，碳掺杂AlGaAs/GaAs HBTs的电流增益可以通过200-300/spl℃的无偏置退火重新启动。重新启动是非破坏性的和可重复的，因此允许对现象进行明确的研究。描述了一个简单的物理模型来解释所有关于再起爆现象的实验结果。

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Mechanism for the initial current gain increase in carbon-doped heterostructure bipolar transistors

This talk reports a new finding that after the initial rise, the current gain of carbon-doped AlGaAs/GaAs HBTs can be re-initiated by a 200-300/spl deg/C annealing under no bias. The re-initiating is nondestructive and reproducible, therefore permitting unambiguous study of the phenomenon. A simple physical model was described to explains all the experimental results obtained on the re-initiation phenomenon.

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1997 GaAs Reliability Workshop. Proceedings

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