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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)最新文献

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Simulation of electron and ion beam optics for high throughput lithography 高通量光刻的电子束和离子束光学模拟
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872658
X. Zhu, H. Liu, E. Munro, J. Rouse
{"title":"Simulation of electron and ion beam optics for high throughput lithography","authors":"X. Zhu, H. Liu, E. Munro, J. Rouse","doi":"10.1109/IMNC.2000.872658","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872658","url":null,"abstract":"Several electron and ion beam systems are currently being developed as possible candidates for high-throughput next generation lithography (\"NGL\"). These include projection electron beam columns such as PREVAIL and SCALPEL ion beam projection systems, multi-beam and multi-column systems. The design and optimization of such systems requires a sophisticated and accurate simulation of the optical performance, including an analysis of the aberrations, Coulomb interaction effects and tolerancing requirements. We have developed a comprehensive range of software tools to assist in this design process.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132773622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly integrated cantilever with light emitting diode, channel waveguide, aperture, and photodiode for scanning near-field optical microscope 高度集成悬臂与发光二极管，通道波导，孔径，光电二极管扫描近场光学显微镜
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872666
M. Sasaki, K. Tanaka, K. Hane
{"title":"Highly integrated cantilever with light emitting diode, channel waveguide, aperture, and photodiode for scanning near-field optical microscope","authors":"M. Sasaki, K. Tanaka, K. Hane","doi":"10.1109/IMNC.2000.872666","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872666","url":null,"abstract":"In this study, a highly integrated cantilever for a scanning near-field optical microscope (SNOM) is described. All components necessary for the SNOM system (light emitting diode (LED) for light source, channel waveguide, nanometer size aperture tip, and photodiode) are integrated on the cantilever.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131456659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Creation of individual holes in SiO/sub 2/ on Si by swift heavy ion bombardment followed by wet and dry etching 通过快速重离子轰击，湿法和干法蚀刻，在SiO/ sub2 / on Si上形成单独的空穴
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872629
K. Awazu, S. Ishii, K. Shima
{"title":"Creation of individual holes in SiO/sub 2/ on Si by swift heavy ion bombardment followed by wet and dry etching","authors":"K. Awazu, S. Ishii, K. Shima","doi":"10.1109/IMNC.2000.872629","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872629","url":null,"abstract":"It has been known that swift heavy ion bombardment could create latent tracks in amorphous SiO/sub 2/ (a-SiO/sub 2/) which turned into a visible hole by etching. Goal of the present examination is to control the hole contour with various etching methods. It was found that individual conic holes could be obtained on bombarded SiO/sub 2/ by wet etching. In contrast, columnar holes could be created on bombarded SiO/sub 2/ by the hybrid etching, which implied a wet etching with 48% HF followed by RIE with CHF/sub 3/. No holes have been observed on the bombarded SiO/sub 2/ followed by the RIE only.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132951328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective growth of InAs quantum dots using AFM-patterned GaAs substrate 利用afm图型GaAs衬底选择性生长InAs量子点
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872736
C. Hyon, S.C. Choi, S. Song, S. Hwang, B. Min, D. Ahn, Y.J. Park, E. Kim
{"title":"Selective growth of InAs quantum dots using AFM-patterned GaAs substrate","authors":"C. Hyon, S.C. Choi, S. Song, S. Hwang, B. Min, D. Ahn, Y.J. Park, E. Kim","doi":"10.1109/IMNC.2000.872736","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872736","url":null,"abstract":"Fabrication of semiconductor quantum dots is of considerable importance for the study of low dimensional physics and for device applications. The growth of self-assembled quantum dots (SAQDs) in the Stranski-Krastanow mode has been attracting considerable interest, because direct one-step formation of ultra-small quantum dots is possible. Recently, many interesting works demonstrate selective growth of such SAQDs utilizing pre-patterned substrates. We have proposed and demonstrated simple nano-carving of GaAs substrates using the cantilever oscillations of an atomic force microscope (AFM). In the conference, we would like to present selective growth of InAs SAQDs on GaAs substrates, which are patterned by our AFM nano-carving technique. We will show that the position control of SAQDs is successfully obtained by adjusting the shape and the size of the AFM patterns.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124500604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Scanning Capacitance Microscopy for measuring device carrier profiles beyond the 100 nm generation 扫描电容显微镜用于测量设备载流子轮廓超过100纳米一代
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872740
J. Kopanski, J. Marchiando, B. Rennex
{"title":"Scanning Capacitance Microscopy for measuring device carrier profiles beyond the 100 nm generation","authors":"J. Kopanski, J. Marchiando, B. Rennex","doi":"10.1109/IMNC.2000.872740","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872740","url":null,"abstract":"Scanning Capacitance Microscopy (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-sectioned silicon transistors. Since 1992, there has been a program at the National Institute of Standards and Technology in the United States to develop the measurement techniques and theoretical modeling necessary to make SCM a practical metrology for quantitative measurement of 2-D carrier profiles. The SCM carrier profiling technique will be described in detail from sample preparation, to SCM image measurement, and to extraction of the final 2-D carrier profile.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127468526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Direct measurement of electron transmission properties of mask membranes for electron projection lithography 电子投影光刻用掩膜电子透射特性的直接测量
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872661
E. Nomura, H. Yamashita, Y. Ochiai, T. Baba
{"title":"Direct measurement of electron transmission properties of mask membranes for electron projection lithography","authors":"E. Nomura, H. Yamashita, Y. Ochiai, T. Baba","doi":"10.1109/IMNC.2000.872661","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872661","url":null,"abstract":"For high-throughput electron projection lithography, two types of masks, stencil- and membrane-masks, have been proposed. For the both types, understanding the interaction between a mask and irradiated electrons is the key to the development of masks and whole EB exposure systems. In the present study, we measured energy and deflection-angle distributions of electrons transmitted through membranes in a direct manner.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124540598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-50-nm patterning in EUV lithography EUV光刻中的亚50纳米图样
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872616
H. Oizumi, I. Nishiyama, H. Yamanashi, Ei Yano, S. Okazaki
{"title":"Sub-50-nm patterning in EUV lithography","authors":"H. Oizumi, I. Nishiyama, H. Yamanashi, Ei Yano, S. Okazaki","doi":"10.1109/IMNC.2000.872616","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872616","url":null,"abstract":"In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116982095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Microfabricated separator and manipulator of blood cells for health care devices 用于医疗保健设备的微型血细胞分离器和操纵器
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872606
T. Ujiie, A. Yamazaki, M. Watanabe, Tomoko Okuda, T. Ichiki, Y. Horiike
{"title":"Microfabricated separator and manipulator of blood cells for health care devices","authors":"T. Ujiie, A. Yamazaki, M. Watanabe, Tomoko Okuda, T. Ichiki, Y. Horiike","doi":"10.1109/IMNC.2000.872606","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872606","url":null,"abstract":"A microfabricated capillary electrophoresis chip has been recently developed and many researchers have reported its attractive potentials such as the drastic increase of speed, reduced sample volumes, higher resolutions and so forth. Furthermore the more aggressive strategy is to integrate a variety of components of analysis system on a chip and has been rapidly developed as so-called \"/spl mu/-TAS (micro total analysis system)\", which is composed of microchannel network for sample pre- and post treatment, chemical reactions and separations and also detection systems like bio/chemical sensors, microoptics and microelectronic devices. In order to achieve the health care device that allows short-time inspection of human body by analyzing a slight amount of body fluid like blood, urine or saliva, we have been developing the micro analysis devices, and so far on-chip analysis of blood cells and serum have been studied based on micro-capillary electrophoresis chips. In this article, for the purpose of on-chip cell and/or particle separation and manipulation, (1) a separation of the serum and blood cells from the whole blood using a centrifugal chip, and (2) cell trapping using interdigitated electrodes have been investigated.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126336148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fabrication and characterization of periodic nano-faceting structures on patterned vicinal [110] GaAs substrates by MOVPE [110]砷化镓衬底上周期性纳米表面化结构的制备与表征
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872737
T. Harada, Y. Oda, J. Motohisa, T. Fukui
{"title":"Fabrication and characterization of periodic nano-faceting structures on patterned vicinal [110] GaAs substrates by MOVPE","authors":"T. Harada, Y. Oda, J. Motohisa, T. Fukui","doi":"10.1109/IMNC.2000.872737","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872737","url":null,"abstract":"Recently, various semiconductor nanoscale structures such as quantum wire (QWR) and quantum dot (QD) structures using self-organizing formation method have been widely studied. This method has the advantage that these structures are formed only by crystal growth. Furthermore, the combination of the self-organizing formation and the pre-patterning on the substrate surface improves the size uniformity and the position control of quantum structures. In this paper, fabrication and characterization of periodic nano-faceting structures grown by metalorganic vapor phase epitaxy (MOVPE) on patterned vicinal substrates is presented.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126556275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control of crystalline structure and ferroelectric properties of Pb(ZrxTi/sub 1-X/)O3 films by pulsed laser deposition 脉冲激光沉积Pb(ZrxTi/sub - 1-X/)O3薄膜晶体结构和铁电性能的控制
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872761
H. Fujita, S. Goto, S. Agata, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda
{"title":"Control of crystalline structure and ferroelectric properties of Pb(ZrxTi/sub 1-X/)O3 films by pulsed laser deposition","authors":"H. Fujita, S. Goto, S. Agata, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda","doi":"10.1109/IMNC.2000.872761","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872761","url":null,"abstract":"We have investigated Pb(Zr/sub X/Ti/sub 1-X/)O/sub 3/ (PZT) films on Pt/SiO/sub 2//Si substrates formed by pulsed laser deposition (PLD) and subsequent rapid thermal annealing (RTA) under various growth conditions. X-ray diffraction analysis revealed that preferentially [100]-oriented perovskite PZT films with trigonal structure were formed after RTA from as-deposited films which had consisted of small grains with pyroclore structure. The degree of [100]-orientation of the PZT film increased with the oxygen partial pressure during PLD. The capacitors made from these films showed higher remnant polarization than those from randomly oriented films.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115106506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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