Sub-50-nm patterning in EUV lithography

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872616

H. Oizumi, I. Nishiyama, H. Yamanashi, Ei Yano, S. Okazaki

引用次数: 2

Abstract

In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.

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EUV光刻中的亚50纳米图样

在这项工作中，我们介绍并研究了一种曝光波长为13.5 nm的EUV光刻(EUVL)微场曝光系统。通过实验模式重复评价了该曝光系统的分辨率极限。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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