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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)最新文献

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High aspect-ratio microchip-based capillary electrophoresis device using chemically machinable photosensitive glass substrate 采用化学加工光敏玻璃基板的高纵横比微芯片毛细管电泳装置
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872626
T. Fujimura, S. Etoh, S. Ishikawa, A. Ikeda, R. Hattori, Y. Kuroki
{"title":"High aspect-ratio microchip-based capillary electrophoresis device using chemically machinable photosensitive glass substrate","authors":"T. Fujimura, S. Etoh, S. Ishikawa, A. Ikeda, R. Hattori, Y. Kuroki","doi":"10.1109/IMNC.2000.872626","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872626","url":null,"abstract":"To analyze DNA fragments rapidly and easily will be a most important process in a future DNA industry. This paper reports a new fabrication process and a new device structure for microchip-based capillary electrophoresis (CE) using chemically machinable photosensitive glass substrate. The fabrication process of our device has an advantage in mass production as an inexpensive device. In addition we can easily obtain the high aspect-ratio structure of the channel, which presents high performance in separation characteristics.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"12 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120845389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new quantum dot formation process using wet etching of poly-Si along grain boundaries 沿晶界湿法蚀刻多晶硅形成量子点的新工艺
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872738
Seong-jong Yoo, Jongho Lee, Hyungcheol Shin
{"title":"A new quantum dot formation process using wet etching of poly-Si along grain boundaries","authors":"Seong-jong Yoo, Jongho Lee, Hyungcheol Shin","doi":"10.1109/IMNC.2000.872738","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872738","url":null,"abstract":"We have proposed a new method to fabricate quantum dots by etching grain boundary of poly-Si recrystallized from very thin amorphous Si. Electrical characteristics such as I-V and C-V of MOS capacitor are introduced. We consider the proposed method is very simple and reasonable, but still needs process optimization of the nano-crystal formation.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"58 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126082964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Formation of micro eaves analyzed by energy balance model at threefold of Cu film/DFR/Ni plating solution 利用能量平衡模型分析了Cu膜/DFR/Ni镀液三倍时微屋檐的形成
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872636
H. Yoshida, T. Nakamura, Y. Kawakami, A. Kawai
{"title":"Formation of micro eaves analyzed by energy balance model at threefold of Cu film/DFR/Ni plating solution","authors":"H. Yoshida, T. Nakamura, Y. Kawakami, A. Kawai","doi":"10.1109/IMNC.2000.872636","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872636","url":null,"abstract":"DFR (Dry Film Photoresist) is widely used mainly in micro plating process. However as the result of liquid intrusion into substrate/DFR interface, a bird's-beak like \"eaves\" is formed at bottom of a plating pattern. The purpose of this presentation is to clarify the mechanism of the \"eaves\" formation by analyzing adhesion energies at the substrate/DFR/liquids threefold.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"794 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126954060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscopic demonstration of static- and dynamic-binding of Eco RI enzyme to extended DNA at a single-molecule level 微观证明的静态和动态结合的Eco RI酶延伸DNA在单分子水平
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872608
H. Kabata, W. Okada, M. Washizu
{"title":"Microscopic demonstration of static- and dynamic-binding of Eco RI enzyme to extended DNA at a single-molecule level","authors":"H. Kabata, W. Okada, M. Washizu","doi":"10.1109/IMNC.2000.872608","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872608","url":null,"abstract":"The restriction enzyme Eco RI is a nanomachine of nature that is a homodimeric protein and has the molecular weight of 60 kDa in the dimer. The physiological function of this machine is degradation of foreign DNA invading cells, and this degradation requires binding to a specific sequence of six base pairs on DNA, GAATTC. Eco RI binds preferably to the GAATTC sequence with the highest affinity to form stable complexes, while binding to other base-pair sequences of DNA with much lower affinity. The difference in the two distinct affinities between sequences, called specificity, enables Eco RI to distinguish the specific GAATTC sequence from flanking nonspecific sequences. The specificity of Eco RI has been applied to in situ optical genome mapping, in which ordered positions of the sequence of interest are visualized along huge chromosomal DNA. Oana et al. has employed photolabeled Eco RI as a landmark for GAATTC sequences to determine their relative positions on asingle DNA molecule in a polyacrylamide solution. Optical mapping with Eco Rl should be facilitated if larger numbers of DNA molecules are stretched, arrayed, and fixed simultaneously, because higher concentrations of DNA enhances binding of the enzyme to DNA and extension of DNA manifests the distance of Eco RI molecules bound onto the DNA from a DNA end. One of the aims of the present study is to show this advantage of an optical mapping with extended DNA.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122809788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of a cavity-confined plasma as a debris-less and high conversion efficiency source for EUV lithography 用于EUV光刻的无碎片高转换效率腔限等离子体光源的研究
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872765
T. Tomie, T. Aota, Y. Kurashima, N. Kandaka, H. Yashiro, K. Nishigori, I. Matsushima, M. Komuro
{"title":"Study of a cavity-confined plasma as a debris-less and high conversion efficiency source for EUV lithography","authors":"T. Tomie, T. Aota, Y. Kurashima, N. Kandaka, H. Yashiro, K. Nishigori, I. Matsushima, M. Komuro","doi":"10.1109/IMNC.2000.872765","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872765","url":null,"abstract":"We are proposing a cavity-confined type laser-produced plasma as a debris-less and high conversion efficiency source for EUV lithography. Our idea is devised in order to make the best use of solid target having higher conversion efficiency and easier wavelength tunability than gas targets. In order to overcome the debris problem, two contrivances are made, i.e., ablation of the solid surface by the irradiation of an ultrashort pulse, and enhancement of the ablated mass density by the cavity structure of the target. Preliminary experimental evaluation of the cavity confinement effect and high efficiency EUV emission are reported.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121783955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Optics for EUV lithography EUV光刻光学
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872750
P. Kurz, Hans-Juergen Mann, M. Antoni, W. Singer, M. Muhlbeyer, F. Melzer, U. Dinger, M. Weiser, S. Stacklies, G. Seitz, F. Haidl, E. Sohmen, W. Kaiser
{"title":"Optics for EUV lithography","authors":"P. Kurz, Hans-Juergen Mann, M. Antoni, W. Singer, M. Muhlbeyer, F. Melzer, U. Dinger, M. Weiser, S. Stacklies, G. Seitz, F. Haidl, E. Sohmen, W. Kaiser","doi":"10.1109/IMNC.2000.872750","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872750","url":null,"abstract":"Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127794193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Contrast evaluation of SCALPEL GHOST method in 100 kV electron projection lithography SCALPEL GHOST法在100kv电子投影光刻中的对比评价
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872653
F. Koba, H. Yamashita, E. Nomura, K. Nakajima, H. Nozue
{"title":"Contrast evaluation of SCALPEL GHOST method in 100 kV electron projection lithography","authors":"F. Koba, H. Yamashita, E. Nomura, K. Nakajima, H. Nozue","doi":"10.1109/IMNC.2000.872653","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872653","url":null,"abstract":"Electron projection lithography (EPL) techniques, such as SCALPEL and PREVAIL, are expected to be candidates for fabricating 80-nm devices or less. In electron-beam lithography, the proximity effect correction (PEC) is the most critical issue for obtaining sufficient dimension accuracy and good resist pattern profiles. The SCALPEL GHOST method, proposed by Watson et al. (1995), has a remarkable advantage to throughput by doing both the pattern and correction exposures, simultaneously. This method, however, degrades the exposure intensity contrast due to a larger background dose than that in other PEC methods, such as pattern modification. In this paper, we investigate the essential conditions for the SCALPEL GHOST PEC to achieve 80-nm resolution in 100 kV EFL in terms of the exposure intensity contrast.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122238867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Feasibility of new ARC using PECVD for both KrF and ArF lithography 在KrF和ArF光刻中使用PECVD的新ARC的可行性
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872645
Y. Kim, Junghyeon Lee, Hanku Cho, J. Moon
{"title":"Feasibility of new ARC using PECVD for both KrF and ArF lithography","authors":"Y. Kim, Junghyeon Lee, Hanku Cho, J. Moon","doi":"10.1109/IMNC.2000.872645","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872645","url":null,"abstract":"We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127955517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF6/H2 downstream plasma 数控局部SF6/H2下游等离子体大直径硅片无损伤压平技术
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872759
M. Yanagisawa, H. Ogawa, Y. Horiike
{"title":"Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF6/H2 downstream plasma","authors":"M. Yanagisawa, H. Ogawa, Y. Horiike","doi":"10.1109/IMNC.2000.872759","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872759","url":null,"abstract":"This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121731642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction of iso-focal tilt in phase edge lithography by adjustment of primary spherical aberration 利用一次球差校正相位边缘光刻等焦倾斜
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872611
S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya
{"title":"Correction of iso-focal tilt in phase edge lithography by adjustment of primary spherical aberration","authors":"S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya","doi":"10.1109/IMNC.2000.872611","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872611","url":null,"abstract":"It is revealed by optical image calculations that iso-focal tilt in phase edge lithography can be corrected by adjustment of primary spherical aberration. Tolerant range of the adjustment is /spl sim/0.02 wave. Moreover, DOF becomes larger than that in ideal optics under corrected spherical aberrations with large RMS-OPD of /spl sim/0.66 wave.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130782760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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