在KrF和ArF光刻中使用PECVD的新ARC的可行性

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872645

Y. Kim, Junghyeon Lee, Hanku Cho, J. Moon

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引用次数: 1

摘要

我们开发并确认了用于KrF和ArF光刻的新型碳弧(CARC)的可行性。CARC在地形上具有很高的一致性，并且在抗蚀剂剥离过程中易于去除。同时获得了良好的电弧性能和具有子层的电弧复合材料的蚀刻特性。因此，CARC是一种很有前途的替代材料，可以替代离子电弧和有机电弧。

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Feasibility of new ARC using PECVD for both KrF and ArF lithography

We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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